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Nondegrading Photoluminescence in Porous Silicon

Yu Heng Zhang1,2, Xin Jian Li1,2,3, Lei Zheng1,2, and Qian Wang Chen1,2

  • 1Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, People's Republic of China
  • 2Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, People's Republic of China
  • 3Department of Physics, Zhengzhou University, Zhengzhou 450052, People's Republic of China

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Phys. Rev. Lett. 81, 1710 – Published 24 August, 1998

DOI: https://doi.org/10.1103/PhysRevLett.81.1710

Abstract

Porous silicon (PS) with nondegrading photoluminescence (PL) was prepared by a novel method. For fresh samples, the PL peak intensity is 2–2.5 times stronger than that in normal PS. Upon exposing PS to ambient air, the PL intensity increases during the first four months and then saturates. No PL degradation is observed for eight months, and the peak position remains unchanged. The same effect can also be achieved by annealing treatments. This PL stability is attributed to the formation of stable Fe-Si bonds on the surface of PS. Exploration of the mechanism provides strong proof of the quantum confinement model of the luminescence of PS.

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Phys. Rev. Lett. 81, 1710– Published 24 August, 1998
  • Received 26 January 1998

© 1998 American Physical Society

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