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Electron-Lattice Interaction on αGa(010)

Ph. Hofmann

Y. Q. Cai*

Ch. Grütter and J. H. Bilgram

  • Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin-Dahlem, Germany
  • and Institute for Storage Ring Facilities, University of Aarhus, 8000 Aarhus C, Denmark

  • Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin-Dahlem, Germany

  • Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule, 8093 Zürich, Switzerland

  • *Present address: Institute for Solid State Physics, University of Tokyo, Tokyo 106, Japan

Phys. Rev. Lett. 81, 1670 – Published 24 August, 1998

DOI: https://doi.org/10.1103/PhysRevLett.81.1670

Abstract

We have investigated the (010) surface of αGa by angle-resolved photoemission and low energy electron diffraction. We find a surface state around the C¯ point of the surface Brillouin zone. The electron-phonon coupling at this surface is very strong with an electron-phonon mass enhancement parameter of λ=1.4±0.10. Our spectra show high background intensity in a projected bulk band gap which cannot be accounted for by defect scattering and is therefore interpreted as indicating a nonquasiparticle behavior. Upon cooling the sample below 220 K we observe a phase transition accompanied by spectral changes near the Fermi level.

References (13)

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