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Near-Field Spectroscopy of a Gated Electron Gas: A Direct Evidence for Electron Localization
Phys. Rev. Lett. 81, 1666 – Published 24 August, 1998
DOI: https://doi.org/10.1103/PhysRevLett.81.1666
Abstract
The near-field photoluminescence of a gated two-dimensional electron gas is measured. We use the negatively charged exciton, formed by binding an electron to a photoexcited electron-hole pair, as an indicator for the local presence of charge. Large spatial fluctuations in the luminescence intensity of the negatively charged exciton are observed. These fluctuations are shown to be due to electrons localized in the random potential of the remote ionized donors. We use these fluctuations to image the electron and the donor distribution in the plane.
References (14)
- C. Jiang, D. C. Tsui, and G. Weimann, Appl. Phys. Lett. 53, 1533 (1988).
- A. L. Efros, Solid State Commun. 65, 1281 (1988); ibid.70, 253 (1989).
- G. Finkelstein, H. Shtrikman, and I. Bar-Joseph, Phys. Rev. Lett. 74, 976 (1995).
- A. J. Shields et al., Phys. Rev. B 52, R5523 (1995); J. L. Osborne et al., 53, 13 002 (1996).
- M. A. Lampert, Phys. Rev. Lett. 1, 450 (1958); B. Stebe and A. Ainane, Superlattices Microstruct. 23, 545 (1989).
- K. Kheng et al., Phys. Rev. Lett. 71, 1752 (1993).
- S. Schmitt-Rink, D. S. Chemla, and D. A. B. Miller, Adv. Phys. 38, 89 (1989).
- E. Betzig and J. K. Trautman, Science 257, 189 (1992).
- M. A. Paesler and P. J. Moyer, Near Field Optics (Wiley, New York, 1996).
- K. Karrai and R. D. Grober, Appl. Phys. Lett. 66, 1842 (1995).
- G. Eytan et al. (unpublished).
- H. F. Hess et al., Science 264, 1740 (1994).
- T. D. Harris et al., Appl. Phys. Lett. 68, 988 (1996).
- S. V. Kravchenko et al., Phys. Rev. Lett. 77, 4938 (1996).