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Temperature-Induced Smearing of the Coulomb Gap: Experiment and Computer Simulation

I. Shlimak, M. Kaveh, R. Ussyshkin, and V. Ginodman

S. D. Baranovskii1, P. Thomas2, and H. Vaupel2

R. W. van der Heijden

  • The Jack and Pearl Resnick Institute of Advanced Technology, Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel

  • 1Fachbereich Physikalische Chemie und Zentrum für Materialwissenschaften der Philipps-Universität Marburg, D-35032 Marburg, Germany
  • 2Fachbereich Physik und Zentrum für Materialwissenschaften der Philipps-Universität Marburg, D-35032 Marburg, Germany

  • Department of Physics, Eindhoven University of Technology, 5600 Eindhoven, The Netherlands

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Phys. Rev. Lett. 75, 4764 – Published 25 December, 1995

DOI: https://doi.org/10.1103/PhysRevLett.75.4764

Abstract

We present the first verification of the theoretically predicted effect of temperature-induced smearing of the Coulomb gap. Measurements of the variable-range-hopping conductivity (VRH) in samples of ion-implanted Si:As and computer simulation are used to study the density of states (DOS) near the Fermi level (FL) in the impurity band. The VRH is determined by the DOS integrated over some energy range that depends on temperature T and on the magnetic field B. Using the interplay between T and B we find that the DOS in the vicinity of the FL increases with increasing T.

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Phys. Rev. Lett. 75, 4764– Published 25 December, 1995
  • Received 30 June 1995

© 1995 American Physical Society

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