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Near Atomic Scale Studies of Electronic Structure at Grain Boundaries in Ni3Al

David A. Muller1, Shanthi Subramanian2, Philip E. Batson3, Stephen L. Sass2, and John Silcox1

  • 1School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
  • 2Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
  • 3IBM Thomas J. Watson Research Center, Yorktown Heights, New York

Phys. Rev. Lett. 75, 4744 – Published 25 December, 1995

DOI: https://doi.org/10.1103/PhysRevLett.75.4744

Abstract

Why does boron doping improve the room temperature ductility of polycrystalline Ni3Al? Besides preventing environmental embrittlement, B changes the fracture mode from intergranular to transgranular, suggesting an increase in the cohesive strength of the grain boundaries. This change in bonding at the grain boundary has been measured using spatially resolved electron energy loss spectroscopy. The Ni L2,3 core edge, which is sensitive to the filling of the Ni d band, shows that only the B-rich regions of the grain boundary have a bonding similar to that of the bulk material. These changes suggest a simple model to describe the cohesion of the boundary.

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