Surface and bulk core-level shifts of the Si(111)<i>√3 √3 </i>-Ag surface: Evidence for a charged <i>√3 √3 </i> layer

S. Kono; K. Higashiyama; T. Kinoshita; T. Miyahara; H. Kato; H. Ohsawa; Y. Enta; F. Maeda; Y. Yaegashi

doi:10.1103/PhysRevLett.58.1555

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Surface and bulk core-level shifts of the Si(111)√3 √3 -Ag surface: Evidence for a charged √3 √3 layer

S. Kono, K. Higashiyama, T. Kinoshita, T. Miyahara, H. Kato, H. Ohsawa, Y. Enta, F. Maeda, and Y. Yaegashi

Department of Physics, Faculty of Science, Tohoku University, Sendai, 980 Japan and
Photon Factory, National Laboratory for High Energy Physics, Tsukuba, Ibaraki 305 Japan

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Phys. Rev. Lett. 58, 1555 – Published 13 April, 1987

DOI: https://doi.org/10.1103/PhysRevLett.58.1555

Abstract

Si 2p and Ag 4d photoelectron spectra have been measured for the Si(111)√3 × √3 -Ag surface at both surface- and bulk-sensitive photon energies. A dramatic shift of the bulk Si 2p component for the √3 × √3 surface has been observed and is attributed to the presence of an inherently charged √3 × √3 layer. A single component of surface Si 2p levels is found for the √3 × √3 surface. Discussion of structural and growth models of the √3 -Ag surface is made.

References (16)

See, for example, a review by G. Le Lay, Surf. Sci. 132, 169 (1983).
I. Lindau, Surf. Sci. 168, 860 (1986).
S. Kono, K. Higashiyama and T. Sagawa, Surf. Sci. 165, 21 (1986), and references therein.
See, for example, a review by P. H. Citrin and G. K. Wertheim, Phys. Rev. B 27, 3176 (1983).
T. Miyahara, S. Suzuki, T. Hanyu, H. Kato, K. Naito, H. Fukutani, I. Nagakura, H. Sugawara, S. Nakai, T. Ishii, H. Noda, T. Manioka and T. Sasaki, Jpn. J. Appl Phys. 24, 293 (1985).
T. Yokotsuka, S. Kono, S. Suzuki and T. Sagawa, Surf. Sci. 127, 35 (1983).
T. Miller, T. C. Hsieh and T.-C. Chiang, Phys. Rev. B 33, 6983 (1986).
F. J. Himpsel, G. Hollinger and R. A. Pollak, Phys. Rev. B 28, 7014 (1983).
J. M. Nicholls, F. Salvan and B. Reihl, Phys. Rev. B 34, 2945 (1986).
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), 2nd ed.
A. Zur, T. C. McGill and D. L. Smith, Phys. Rev. B 28, 2060 (1983), showed that for unit charge defects, a defect density of app 1 times $10^{12}$ ${cm}^{- 2}$ _ is needed to pin $E_{F}$ for a submonolayer-coverage GaAs surface. For the sqrt 3-Ag surface, the presence of unit charge defects and that amount of defect density are unlikely.
See, for example, a review by A. Kahn, Surf. Sci. Rep. 3, 193 (1983).
T. Hanawa, K. Fukuda, and M. Watamori, in Proceedings of the Meeting of the American Vacuum Society, Baltimore, Maryland, 1986, edited by G. Lucorsky, J. Vac. Sci. Technol. (to be published), Abstract No. SS2-WeA6, and private communication.
E. J. van Loenen, J. E. Demuth, R. M. Tromp. and R. J. Hamers, Phys. Rev. Lett. 58, 373 (1987).
R. J. Wilson and S. Chiang, Phys. Rev. Lett. 58, 369 (1987).
Similar phenomena for Ag 3d x-ray photoemission spectroscopy intensity can be found in Fig. 1 of Ref. 3.

[c1] See, for example, a review by G. Le Lay, Surf. Sci. 132, 169 (1983).

[c2] I. Lindau, Surf. Sci. 168, 860 (1986).

[c3] S. Kono, K. Higashiyama and T. Sagawa, Surf. Sci. 165, 21 (1986), and references therein.

[c4] See, for example, a review by P. H. Citrin and G. K. Wertheim, Phys. Rev. B 27, 3176 (1983).

[c5] T. Miyahara, S. Suzuki, T. Hanyu, H. Kato, K. Naito, H. Fukutani, I. Nagakura, H. Sugawara, S. Nakai, T. Ishii, H. Noda, T. Manioka and T. Sasaki, Jpn. J. Appl Phys. 24, 293 (1985).

[c6] T. Yokotsuka, S. Kono, S. Suzuki and T. Sagawa, Surf. Sci. 127, 35 (1983).

[c7] T. Miller, T. C. Hsieh and T.-C. Chiang, Phys. Rev. B 33, 6983 (1986).

[c8] F. J. Himpsel, G. Hollinger and R. A. Pollak, Phys. Rev. B 28, 7014 (1983).

[c9] J. M. Nicholls, F. Salvan and B. Reihl, Phys. Rev. B 34, 2945 (1986).

[c10] S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), 2nd ed.

[c11] A. Zur, T. C. McGill and D. L. Smith, Phys. Rev. B 28, 2060 (1983), showed that for unit charge defects, a defect density of app 1 times $10^{12}$ ${cm}^{- 2}$ _ is needed to pin $E_{F}$ for a submonolayer-coverage GaAs surface. For the sqrt 3-Ag surface, the presence of unit charge defects and that amount of defect density are unlikely.

[c12] See, for example, a review by A. Kahn, Surf. Sci. Rep. 3, 193 (1983).

[c13] T. Hanawa, K. Fukuda, and M. Watamori, in Proceedings of the Meeting of the American Vacuum Society, Baltimore, Maryland, 1986, edited by G. Lucorsky, J. Vac. Sci. Technol. (to be published), Abstract No. SS2-WeA6, and private communication.

[c14] E. J. van Loenen, J. E. Demuth, R. M. Tromp. and R. J. Hamers, Phys. Rev. Lett. 58, 373 (1987).

[c15] R. J. Wilson and S. Chiang, Phys. Rev. Lett. 58, 369 (1987).

[c16] Similar phenomena for Ag 3d x-ray photoemission spectroscopy intensity can be found in Fig. 1 of Ref. 3.

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Surface and bulk core-level shifts of the Si(111)√3 √3 -Ag surface: Evidence for a charged √3 √3 layer

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