Strain-Induced Two-Dimensional Electron Gas in Selectively Doped <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi mathvariant="normal">Si</mi><mo>/</mo><mrow><msub><mrow><mi mathvariant="normal">Si</mi></mrow><mrow><mi>x</mi></mrow></msub></mrow><mrow><msub><mrow><mi mathvariant="normal">Ge</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow></math></span> Superlattices

G. Abstreiter; H. Brugger; T. Wolf; H. Jorke; H. J. Herzog

doi:10.1103/PhysRevLett.54.2441

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Strain-Induced Two-Dimensional Electron Gas in Selectively Doped $Si / {Si}_{x} {Ge}_{1 - x}$ Superlattices

G. Abstreiter, H. Brugger, and T. Wolf

H. Jorke and H. J. Herzog

Physik-Department E 16, Technische Universität München, D-8046 Garching, Federal Republic of Germany

AEG-Telefunken, Forschungsinstitut, D-7900 Ulm, Federal Republic of Germany

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Phys. Rev. Lett. 54, 2441 – Published 3 June, 1985

DOI: https://doi.org/10.1103/PhysRevLett.54.2441

Abstract

We report the observation of two-dimensional electron systems and enhanced mobilities in Si/ ${Si}_{0.5}$ ${Ge}_{0.5}$ strained-layer multilayer structures. The built-in strain is measured by phonon Raman spectroscopy. The mobility enhancement depends strongly on the position of the doped region within the layers. The experimental results can be explained in a consistent way when carrier confinement in the Si layer is assumed. The importance of the built-in strain in lowering the conduction band in Si is emphasized.

References (20)

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J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, Appl. Phys. Lett. 44, 102 (1984)
J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara, and J. K. Robinson, J. Vac. Sci. Technol. A 2, 436 (1984)
E. Kasper and W. Papst, Thin Solid Films 37, L5 (1976)
F. Cerdeira, A. Pinczuk, J. C. Bean, B. Batlogg, and B. A. Wilson, Appl. Phys. Lett. 45, 1138 (1984)
R. People, J. C. Bean, D. V. Lang, A. M. Sergent, H. L. Störmer, K. W. Wecht, R. T. Lynch, and K. Baldwin, Appl. Phys. Lett. 45, 1231 (1984)
H. Jorke and H. J. Herzog, in Proceedings of the International Symposium on Si Molecular Beam Epitaxy, Toronto, Canada, 1985 (to be published)
H. Jorke and H. Kibble, in [7]
E. Kasper, Appl. Phys. A 28, 129 (1982)
E. Kasper and K. Wörner, in Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology, edited by K. E. Bean and G. A. Rozgonyi (Electrochemical Society, Pennington, 1984), p. 429
E. Anastassakis, A. Pinczuk, E. Burstein, F. H. Pollak, and M. Cardona, Solid State Commun. 8, 133 (1970)
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J. S. Lannin, Phys. Rev. B 16, 1510 (1977)
J. B. Renucci, M. A. Renucci, and M. Cardona, Solid State Commun. 9, 1651 (1971)
H. L. Störmer, R. Dingle, A. C. Gossard, W. Wiegmann, and M. D. Sturge, Solid State Commun. 29, 705 (1979)
G. Abstreiter, J. P. Kotthaus, J. F. Koch, and G. Dorda, Phys. Rev. B 14, 2480 (1976)
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T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982)

[c1] E. Kasper and H. J. Herzog, Appl. Phys. 8, 199 (1975)

[c2] J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, Appl. Phys. Lett. 44, 102 (1984)

[c3] J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara, and J. K. Robinson, J. Vac. Sci. Technol. A 2, 436 (1984)

[c4] E. Kasper and W. Papst, Thin Solid Films 37, L5 (1976)

[c5] F. Cerdeira, A. Pinczuk, J. C. Bean, B. Batlogg, and B. A. Wilson, Appl. Phys. Lett. 45, 1138 (1984)

[c6] R. People, J. C. Bean, D. V. Lang, A. M. Sergent, H. L. Störmer, K. W. Wecht, R. T. Lynch, and K. Baldwin, Appl. Phys. Lett. 45, 1231 (1984)

[c7] H. Jorke and H. J. Herzog, in Proceedings of the International Symposium on Si Molecular Beam Epitaxy, Toronto, Canada, 1985 (to be published)

[c8] H. Jorke and H. Kibble, in [7]

[c9] E. Kasper, Appl. Phys. A 28, 129 (1982)

[c10] E. Kasper and K. Wörner, in Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology, edited by K. E. Bean and G. A. Rozgonyi (Electrochemical Society, Pennington, 1984), p. 429

[c11] E. Anastassakis, A. Pinczuk, E. Burstein, F. H. Pollak, and M. Cardona, Solid State Commun. 8, 133 (1970)

[c12] M. Chandrasekhar, J. B. Renucci, M. Cardona, Phys. Rev. B 17, 1623 (1978)

[c13] M. A. Renucci, J. B. Renucci, and M. Cardona, in Proceedings of the Second International Conference on Light Scattering in Solids, edited by M. Balkanski (Flammarion, Paris, 1971), p. 326

[c14] J. S. Lannin, Phys. Rev. B 16, 1510 (1977)

[c15] J. B. Renucci, M. A. Renucci, and M. Cardona, Solid State Commun. 9, 1651 (1971)

[c16] H. L. Störmer, R. Dingle, A. C. Gossard, W. Wiegmann, and M. D. Sturge, Solid State Commun. 29, 705 (1979)

[c17] G. Abstreiter, J. P. Kotthaus, J. F. Koch, and G. Dorda, Phys. Rev. B 14, 2480 (1976)

[c18] R. Braunstein, A. R. Moore, and F. Herman, Phys. Rev. 109, 695 (1958)

[c19] J. Balslev, Phys. Rev. 143, 636 (1966)

[c20] T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982)

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Strain-Induced Two-Dimensional Electron Gas in Selectively Doped $Si / {Si}_{x} {Ge}_{1 - x}$ Superlattices

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Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si/SixGe1−x Superlattices

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Strain-Induced Two-Dimensional Electron Gas in Selectively Doped $Si / {Si}_{x} {Ge}_{1 - x}$ Superlattices