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Physical Review Letters

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Direct Photoemission Study of the Antibonding Surface-State Band on Ge(111)2×1

J. M. Nicholls, P. Mårtensson, and G. V. Hansson

Department of Physics and Measurement Technology, Linköping Institute of Technology, S-581 83 Linköping, Sweden

Phys. Rev. Lett. 54, 2363 – Published 27 May, 1985Erratum Phys. Rev. Lett. 55, 638 (1985)

DOI: https://doi.org/10.1103/PhysRevLett.54.2363

Abstract

The cleaved Ge(111)2×1 surface of a heavily $n$ -doped crystal has been studied with angle-resolved photoemission. A new partly filled surface-state band is observed at the Fermi level, only appearing close to the $\bar{J} - \bar{K}$ line in the 2×1 surface Brillouin zone. The observed emission corresponds to the dispersion minimum of the antibonding band in the $π$ -bonded chain model. The direct band gap between the surface-state bands is found to be 0.5 eV, in good agreement with results from absorption measurements.

Erratum

Direct Photoemission Study of the Antibonding Surface-State Band on Ge(111)2×1

J. M. Nicholls, P. Mårtensson, and G. V. Hansson

Phys. Rev. Lett. 55, 638 (1985)

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