Dielectric Constant and Mobility of a Doped Zero-Gap Semiconductor

L. Liu; E. Tosatti

doi:10.1103/PhysRevLett.23.772

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Dielectric Constant and Mobility of a Doped Zero-Gap Semiconductor

L. Liu^*

E. Tosatti

Department of Physics, Northwestern University, Evanston, Illinois 60201, and Gruppo Nazionale di Struttura della Materia, Sezione di Pisa, Italy

Scuola Normale Superiore, Pisa, Italy, and Gruppo Nazionale di Struttura della Materia, Sezione di Pisa, Italy

^*Work supported in part by the National Science Foundation Grant No. GP 7703.

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Phys. Rev. Lett. 23, 772 – Published 6 October, 1969Erratum Phys. Rev. Lett. 23, 1205 (1969)

DOI: https://doi.org/10.1103/PhysRevLett.23.772

Abstract

The concentration-dependent static dielectric constant is calculated for degenerate $n$ -type $α$ -Sn. The anomalous enhancement of the low-temperature and low-concentration electron mobility is explained.

Erratum

Dielectric Constant and Mobility of a Doped Zero-Gap Semiconductor.

L. Liu and E. Tosatti

Phys. Rev. Lett. 23, 1205 (1969)

References (10)

L. Liu and D. Brust, Phys. Rev. Letters 20, 651 (1968) Phys. Rev. 173, 777 (1968)
D. Sherrington and W. Kohn, Rev. Mod. Phys. 40, 767 (1968) B. I. Halperin and T. M. Rice, 40, 755 (1968)
E. D. Hinkley and A. W. Ewald, Phys. Rev. 134, A126 (1964)
O. N. Tufte and A. W. Ewald, Phys. Rev. 122, 1431 (1961)
C. F. Lavine, thesis, Northwestern University (unpublished)
P. Nozières and D. Pines, Nuovo Cimento 9, 470 (1958) Phys. Rev. 109, 762 (1958) H. Ehrenreich and M. H. Cohen, 115, 786 (1959)
R. E. Lindquist and A. W. Ewald, Phys. Rev. 135, A191 (1964)
R. B. Dingle, Phil. Mag. 46, 831 (1955)
B. L. Booth and A. W. Ewald, Phys. Rev. Letters 18, 491 (1967)
D. Sherrington and W. Kohn, Phys. Rev. Letters 21, 153 (1968)

[c1] L. Liu and D. Brust, Phys. Rev. Letters 20, 651 (1968) Phys. Rev. 173, 777 (1968)

[c2] D. Sherrington and W. Kohn, Rev. Mod. Phys. 40, 767 (1968) B. I. Halperin and T. M. Rice, 40, 755 (1968)

[c3] E. D. Hinkley and A. W. Ewald, Phys. Rev. 134, A126 (1964)

[c4] O. N. Tufte and A. W. Ewald, Phys. Rev. 122, 1431 (1961)

[c5] C. F. Lavine, thesis, Northwestern University (unpublished)

[c6] P. Nozières and D. Pines, Nuovo Cimento 9, 470 (1958) Phys. Rev. 109, 762 (1958) H. Ehrenreich and M. H. Cohen, 115, 786 (1959)

[c7] R. E. Lindquist and A. W. Ewald, Phys. Rev. 135, A191 (1964)

[c8] R. B. Dingle, Phil. Mag. 46, 831 (1955)

[c9] B. L. Booth and A. W. Ewald, Phys. Rev. Letters 18, 491 (1967)

[c10] D. Sherrington and W. Kohn, Phys. Rev. Letters 21, 153 (1968)

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Dielectric Constant and Mobility of a Doped Zero-Gap Semiconductor

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Dielectric Constant and Mobility of a Doped Zero-Gap Semiconductor.

References (10)

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