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Theory of Quantum Anomalous Hall Phases in Pentalayer Rhombohedral Graphene Moiré Structures

Zhihuan Dong*, Adarsh S. Patri*, and T. Senthil

  • *These authors contributed equally to this work.
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Phys. Rev. Lett. 133, 206502 – Published 12 November, 2024

DOI: https://doi.org/10.1103/PhysRevLett.133.206502

Abstract

Remarkable recent experiments on the moiré structure formed by pentalayer rhombohedral graphene aligned with a hexagonal boron nitride substrate report the discovery of a zero field fractional quantum Hall effect. These “(fractional) quantum anomalous Hall” [(F)QAH] phases occur for one sign of a perpendicular displacement field, and correspond, experimentally, to full or partial filling of a valley polarized Chern-1 band. Such a band is absent in the noninteracting band structure. Here we show that electron-electron interactions play a crucial role, and present microscopic theoretical calculations demonstrating the emergence of a nearly flat, isolated, Chern-1 band and FQAH phases in this system. We also study the four- and six-layer analogs and identify parameters where a nearly flat isolated Chern-1 band emerges which may be suitable to host FQAH physics.

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Fractional Quantum Anomalous Hall Effect in Rhombohedral Multilayer Graphene in the Moiréless Limit

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Anomalous Hall crystals in rhombohedral multilayer graphene. II. General mechanism and a minimal model

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Article Text

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Phys. Rev. Lett. 133, 206502– Published 12 November, 2024
  • Received 19 November 2023
  • Accepted 26 August 2024
Article part of CHORUS
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