Volume 52, Issue 16

Yu. M. Yarmoshenko, M. A. Korotin, V. A. Trofimova, V. R. Galakhov, L. V. Elokhina, E. Z. Kurmaev, St. Uhlenbrock, M. Neumann, P. R. Slater, and C. Greaves

Phys. Rev. B 52, 11830 (1995) - Published 15 October, 1995

Stability, chemical bonding, and vibrational properties of amorphous carbon at different mass densities

Th. Köhler, Th. Frauenheim, and G. Jungnickel

Phys. Rev. B 52, 11837 (1995) - Published 15 October, 1995

Coexistence of short- and large-scale phase variations in a charge-density wave weakly coupled to impurities

Ioan Bâldea, Horst Köppel, and Lorenz S. Cederbaum

Phys. Rev. B 52, 11845 (1995) - Published 15 October, 1995

Semiconductors I: bulk

Resonant photoemission study on the boron 1s exciton of the wide-band-gap semiconductor c-BN

S. Shin, A. Agui, M. Fujisawa, Y. Tezuka, T. Ishii, Y. Minagawa, Y. Suda, A. Ebina, O. Mishima, and K. Era

Phys. Rev. B 52, 11853 (1995) - Published 15 October, 1995

Vibrational spectroscopy of group-II-acceptor–hydrogen complexes in GaP

M. D. McCluskey, E. E. Haller, J. Walker, and N. M. Johnson

Phys. Rev. B 52, 11859 (1995) - Published 15 October, 1995

Si K, Si L, and Cr K x-ray valence-band studies of bonding in chromium silicides: Experiment and theory

A. Šimůnek, M. Polčík, and G. Wiech

Phys. Rev. B 52, 11865 (1995) - Published 15 October, 1995

${}^{11}B$ NMR and relaxation study of boron nitride

M. Fanciulli and M. Corti

Phys. Rev. B 52, 11872 (1995) - Published 15 October, 1995

Nonradiative recombination processes in nickel- and iron-doped ZnS and ZnSe studied by photoinduced electron-spin resonance

M. Surma, A. J. Zakrzewski, and M. Godlewski

Phys. Rev. B 52, 11879 (1995) - Published 15 October, 1995

First-principles study of DX centers in CdTe, ZnTe, and ${Cd}_{x}$ ${Zn}_{1 - x}$ Te alloys

C. H. Park and D. J. Chadi

Phys. Rev. B 52, 11884 (1995) - Published 15 October, 1995

Effect of the image potential on excitons in semi-infinite semiconductors

D. Viri and R. Del Sole

Phys. Rev. B 52, 11891 (1995) - Published 15 October, 1995

Structure and visible photoluminescence of porous ${Si}_{1 - x}$ ${Ge}_{x}$

M. Schoisswohl, J. L. Cantin, M. Chamarro, H. J. von Bardeleben, T. Morgenstern, E. Bugiel, W. Kissinger, and R. C. Andreu

Phys. Rev. B 52, 11898 (1995) - Published 15 October, 1995

Electronic charge distribution in crystalline germanium

Z. W. Lu, Alex Zunger, and Moshe Deutsch

Phys. Rev. B 52, 11904 (1995) - Published 15 October, 1995

First-principles study of phosphorus and nitrogen impurities in ZnSe

K. W. Kwak, David Vanderbilt, and R. D. King-Smith

Phys. Rev. B 52, 11912 (1995) - Published 15 October, 1995

Outgoing excitonic resonance in multiphonon Raman scattering from polar semiconductors

V. I. Belitsky, A. Cantarero, S. T. Pavlov, M. Cardona, I. G. Lang, and A. V. Prokhorov

Phys. Rev. B 52, 11920 (1995) - Published 15 October, 1995

Use of zinc diffusion into GaAs for determining properties of gallium interstitials

G. Bösker, N. A. Stolwijk, H.-G. Hettwer, A. Rucki, W. Jäger, and U. Södervall

Phys. Rev. B 52, 11927 (1995) - Published 15 October, 1995

Semiconductors II: surfaces, interfaces, microstructures, and related topics

Surface electronic and atomic structure of ${ErSi}_{1.7}$ on Si(111)

L. Stauffer, A. Mharchi, S. Saintenoy, C. Pirri, P. Wetzel, D. Bolmont, and G. Gewinner

Phys. Rev. B 52, 11932 (1995) - Published 15 October, 1995

Mesoscopic ring under the influence of time-periodical flux: Aharonov-Bohm oscillations and transmission of wave packets

Evgeny N. Bulgakov and Almas F. Sadreev

Phys. Rev. B 52, 11938 (1995) - Published 15 October, 1995

Static and dynamic correlation functions of a two-dimensional quantum electron fluid

R. K. Moudgil, P. K. Ahluwalia, and K. N. Pathak

Phys. Rev. B 52, 11945 (1995) - Published 15 October, 1995

Optical intersubband transitions in conduction-band quantum wells

Rui Q. Yang

Phys. Rev. B 52, 11958 (1995) - Published 15 October, 1995

InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure

M. Grundmann, O. Stier, and D. Bimberg

Phys. Rev. B 52, 11969 (1995) - Published 15 October, 1995

Hydrogenic impurity levels, dielectric constant, and Coulomb charging effects in silicon crystallites

G. Allan, C. Delerue, M. Lannoo, and E. Martin

Phys. Rev. B 52, 11982 (1995) - Published 15 October, 1995

Electron mobility in two-dimensional modulation-doped ${In}_{1 - x}$ ${Al}_{x}$ As/ ${In}_{1 - y}$ ${Ga}_{y}$ As alloy systems

J. E. Hasbun

Phys. Rev. B 52, 11989 (1995) - Published 15 October, 1995

Performance of correlation functionals in ab initio chemisorption cluster-model calculations: Alkali metals on Si(111)

A. Clotet, J. M. Ricart, J. Rubio, F. Illas, E. San Fabián, and F. Moscardó

Phys. Rev. B 52, 11998 (1995) - Published 15 October, 1995

Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxy

I. A. Buyanova, W. M. Chen, A. Henry, W.-X. Ni, G. V. Hansson, and B. Monemar

Phys. Rev. B 52, 12006 (1995) - Published 15 October, 1995

Photoelectric emission from negative-electron-affinity diamond (111) surfaces: Exciton breakup versus conduction-band emission

C. Bandis and B. B. Pate

Phys. Rev. B 52, 12056 (1995) - Published 15 October, 1995

Initial- and final-state effects in the conduction bands of 2H- ${MoS}_{2}$ (0001) studied by $k_{∥}$ -resolved inverse photoemission spectroscopy

V. Langlais, H. Belkhir, J.-M. Themlin, J.-M. Debever, L.-M. Yu, and P. A. Thiry

Phys. Rev. B 52, 12095 (1995) - Published 15 October, 1995

Evidence for quantum confinement in porous silicon from photoluminescence measurements

V. A. Joshkin, M. N. Naidenkov, V. N. Pavlenko, A. V. Kvit, and S. R. Oktyabrsky

Phys. Rev. B 52, 12102 (1995) - Published 15 October, 1995

Band structure and electro-optical properties of mixed type-I/type-II ${In}_{x}$ ${Ga}_{1 - x}$ As/ ${In}_{y}$ ${Ga}_{1 - y}$ As superlattices

R. Schwedler, A. Ziebell, F. Brüggemann, B. Opitz, A. Kohl, and H. Kurz

Phys. Rev. B 52, 12108 (1995) - Published 15 October, 1995

Electronic subband structure of InP/ ${In}_{x}$ ${Ga}_{1 - x}$ P quantum islands from high-pressure photoluminescence and photoreflectance

C. Ulrich, S. Ves, A. R. Goñi, A. Kurtenbach, K. Syassen, and K. Eberl

Phys. Rev. B 52, 12212 (1995) - Published 15 October, 1995

Magnetotransport in a pseudomorphic GaAs/ ${Ga}_{0.8}$ ${In}_{0.2}$ As/ ${Ga}_{0.75}$ ${Al}_{0.25}$ As heterostructure with a Si δ-doping layer

M. van der Burgt, V. C. Karavolas, F. M. Peeters, J. Singleton, R. J. Nicholas, F. Herlach, J. J. Harris, M. Van Hove, and G. Borghs

Phys. Rev. B 52, 12218 (1995) - Published 15 October, 1995

Surface physics, low-dimensional systems, and related topics

Structural determination of a W(001)c(2×2)-Ag surface by x-ray photoelectron diffraction with multiple-scattering analysis

X. Chen, T. Abukawa, J. Tani, and S. Kono

Phys. Rev. B 52, 12380 (1995) - Published 15 October, 1995

COMMENTS

Universality of the scaling exponents for the T=0 conductivity and Hall coefficient for very weakly compensated barely metallic silicon

T. G. Castner

Phys. Rev. B 52, 12434 (1995) - Published 15 October, 1995

Response to ‘‘Universality of the scaling exponents for the T=0 conductivity and Hall coefficient for very weakly compensated barely metallic silicon’’

Peihua Dai, Snezana Bogdanovich, Youzhu Zhang, and M. P. Sarachik

Phys. Rev. B 52, 12439 (1995) - Published 15 October, 1995

Comment on ‘‘Suppression of conductance fluctuations in short one-dimensional conductors’’

J. Heinrichs

Phys. Rev. B 52, 12441 (1995) - Published 15 October, 1995

Scanning tunneling microscopy: Energetics from statistical analysis

Peter J. Feibelman

Phys. Rev. B 52, 12444 (1995) - Published 15 October, 1995