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Spin polarization selective anomalous Hall responses in type-III ferrovalley heterostructures
Phys. Rev. B 114, 165406 – Published 8 September, 2026
DOI: https://doi.org/10.1103/fhfd-wkrd
Abstract
Ferrovalley materials are a promising option for achieving controllable valleytronic and topological states in van der Waals heterostructures (vdWHs). Through first-principles calculations, we demonstrate that a type-III vdWH can host multiple magnetically tunable topological phases. The broken-gap band alignment promotes charge transfer between the and layers. However, charge transfer occurs preferentially between valleys with the same spin polarization, resulting in spin-selective band inversion and gap opening. The resulting topological phase is governed by the magnetization direction. With out-of-plane magnetization, a gap primarily opens at a single or valley, producing a valley-polarized quantum anomalous Hall state with one chiral edge state. In contrast, in-plane magnetization opens gaps at both and valleys, producing counterpropagating edge states that are characteristic of a time-reversal-symmetry-broken valley-polarized quantum spin Hall state. Furthermore, altering the stacking configuration and reversing the magnetization direction enables control over the sign of the Berry curvature and the activation or suppression of topological band inversion at the two valleys. These findings establish type-III ferrovalley vdWHs as a versatile platform for engineering spin-selective anomalous Hall responses and tunable topological valley transport.
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