- Physical Review Journals
All JournalsPhysics Magazine
Access Provided by Xinjiang University

Physical Review B

Export citation

Export citation

Choose format for download:

Download Citation
  • Access by Xinjiang University

Spin dephasing in drift-dominated semiconductor spintronics devices

Biqin Huang* and Ian Appelbaum

  • Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware 19716, USA

  • *bqhuang@udel.edu
PDF

Phys. Rev. B 77, 165331 – Published 22 April, 2008

DOI: https://doi.org/10.1103/PhysRevB.77.165331

Abstract

A spin-transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the ohmic regime, dephasing is independent of transit length and determined primarily by voltage drop across the spin-transport region. The effects of voltage and temperature predicted by the model are compared to experimental results from a 350−μm-thick silicon spin-transport device using derived mathematical expressions of spin dephasing.

View figure in article

Article Text

References (24)

  1. S. Wolf, D. Awschalom, R. Buhrman, J. Daughton, S. von Molnár, M. Roukes, A. Chtchelkanova, and D. Treger, Science 294, 1488 (2001).
  2. S. Wolf, A. Chtchelkanova, and D. Treger, IBM J. Res. Dev. 50, 101 (2006).
  3. D. Awschalom and M. Flatté, Nat. Phys. 3, 153 (2007).
  4. J. Gregg, I. Petej, E. Jouguelet, and C. Dennis, J. Phys. D 35, R121 (2002).
  5. I. Žutić, J. Fabian, and S. DasSarma, Rev. Mod. Phys. 76, 323 (2004).
  6. H. Dery, P. Dalal, L. Cywinski, and L. J. Sham, Nature (London) 447, 573 (2007).
  7. J. Fabian, A. Matos-Abiague, C. Ertler, P. Stano, and I. Žutić, Acta Phys. Slov. 57, 565 (2007).
  8. M. Konig, A. Tschetschetkin, E. M. Hankiewicz, J. Sinova, V. Hock, V. Daumer, M. Schafer, C. R. Becker, H. Buhmann, and L. W. Molenkamp, Phys. Rev. Lett. 96, 076804 (2006).
  9. N. T. Bagraev, N. G. Galkin, W. Gehlhoff, L. E. Klyachkin, A. M. Malyarenko, and I. A. Shelykh, J. Phys.: Condens. Matter 18, L567 (2006).
  10. T. Bergsten, T. Kobayashi, Y. Sekine, and J. Nitta, Phys. Rev. Lett. 97, 196803 (2006).
  11. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
  12. I. Appelbaum and D. Monsma, Appl. Phys. Lett. 90, 262501 (2007).
  13. B. Huang, D. Monsma, and I. Appelbaum, Appl. Phys. Lett. 91, 072501 (2007).
  14. F. G. Monzon, H. X. Tang, and M. L. Roukes, Phys. Rev. Lett. 84, 5022 (2000).
  15. M. Johnson and R. H. Silsbee, Phys. Rev. Lett. 55, 1790 (1985).
  16. M. Johnson and R. H. Silsbee, Phys. Rev. B 37, 5326 (1988).
  17. E. Hahn, Phys. Rev. 80, 580 (1950).
  18. M. Q. Weng and M. W. Wu, Phys. Rev. B 68, 075312 (2003).
  19. X. Lou, C. Adelmann, S. Crooker, E. Garlid, J. Zhang, S. Reddy, S. Flexner, C. Palmstrøm, and P. A. Crowell, Nat. Phys. 3, 197 (2007).
  20. I. Appelbaum, B. Huang, and D. Monsma, Nature (London) 447, 295 (2007).
  21. B. Huang, D. J. Monsma, and I. Appelbaum, Phys. Rev. Lett. 99, 177209 (2007).
  22. B. Huang, D. Monsma, and I. Appelbaum, J. Appl. Phys. 102, 013901 (2007).
  23. W. Louisell, R. Pidd, and H. Crane, Phys. Rev. 94, 7 (1954).
  24. C. Canali, C. Jacoboni, F. Nava, G. Ottaviani, and A. Alberigi-Quaranta, Phys. Rev. B 12, 2265 (1975).

Outline

Information

Phys. Rev. B 77, 165331– Published 22 April, 2008
  • Received 11 January 2008

© 2008 American Physical Society

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation