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P31 Knight shifts and spin dynamics in Si:P at temperatures comparable to the Fermi temperature

M. J. R. Hoch

D. F. Holcomb

  • School of Physics, University of the Witwatersrand, Johannesburg 2050, South Africa and National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA

  • Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA

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Phys. Rev. B 71, 035115 – Published 26 January, 2005

DOI: https://doi.org/10.1103/PhysRevB.71.035115

Abstract

Meintjes, Danielson, and Warren (MDW) have recently reported the results of high-temperature NMR and Hall effect experiments using samples of Si:P with P concentrations at, and above, the metal-insulator transition value of 3.7×1018cm−3. MDW interpret their measurements of the P31 Knight shift (K) and relaxation rate (1∕T1) in terms of a model that emphasizes the role of impurity bands for just-metallic samples. We show that a number of features of the MDW data can be usefully explored by use of a less elaborate approach. An extension of the Korringa relation, which relates K and 1∕T1, into regimes where kBT is comparable to, or greater than, the Fermi energy EF confirms that the electron-nucleus hyperfine interaction does, indeed, control Knight shift and relaxation rate in this high-T regime. We also explore insights gained by comparison of the MDW data with the extensive earlier NMR data at 4.2K and below. The extended Korringa relation provides a method for analyzing high-T NMR data in other low carrier density systems.

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See Also

Temperature-dependent NMR study of the impurity state in heavily doped Si:P

Ernesta M. Meintjes, Jeremy Danielson, and William W. Warren, Jr.
Phys. Rev. B 71, 035114 (2005)

Article Text

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Outline

Information

Phys. Rev. B 71, 035115– Published 26 January, 2005
  • Received 13 May 2004
  • Accepted 27 September 2004

© 2005 American Physical Society

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