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Using electronic structure changes to map the H−T phase diagram of α′−NaV2O5

A. B. Sushkov and J. L. Musfeldt

S. A. Crooker

J. Jegoudez and A. Revcolevschi

  • Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996

  • National High Magnetic Field Laboratory, MS E536, Los Alamos, New Mexico 87545

  • Laboratoire de Physicochimie de l’Etat Solide, Université de Paris-Sud, Bâtiment 414, F-91405 Orsay, France

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Phys. Rev. B 63, 220401(R) – Published 26 April, 2001

DOI: https://doi.org/10.1103/PhysRevB.63.220401

Abstract

We report polarized optical reflectance studies of α′−NaV2O5 as a function of temperature (4–45 K) and magnetic field (0–60 T). Rung directed electronic structure changes, as measured by near-infrared reflectance ratios ΔR(H)=R(H)/R(H=0 T), are especially sensitive to the phase boundaries. We employ these changes to map out an H−T phase diagram. Topological highlights include the observation of an additional phase boundary slightly below TSG, enhanced curvature of the 34 K phase boundary above 35 T, and, surprisingly, strong hysteresis effects of both transitions with applied field.

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Phys. Rev. B 63, 220401(R)– Published 26 April, 2001
  • Received 20 December 2000

© 2001 American Physical Society

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