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Combined photoemission and inverse photoemission study of
Phys. Rev. B 63, 035107 – Published 2 January, 2001
DOI: https://doi.org/10.1103/PhysRevB.63.035107
Abstract
We report on a comprehensive study of the electronic structure of the layered semiconductor The occupied and unoccupied band structure has been investigated by combined angle-resolved photoemission and inverse photoemission. The results are discussed in the context of a fully relativistic linear-muffin-tin-orbital calculation as well as an extended linear-augmented-plane-wave calculation showing a very good agreement between experiment and theory. From the measurements, we obtain an indirect band gap of 2.85 eV between and M/L. This value differs significantly from optical results In the normal direction we observe the direct band gap of 3.6 eV.
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