Surface states of the <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mn>3</mn><mi mathvariant="normal">C</mi><mo>−</mo><mi mathvariant="normal">SiC</mi><mn></mn><mo>(</mo><mn>001</mn><mo>)</mo><mn></mn><mo>−</mo><mi>c</mi><mo>(</mo><mn>4</mn><mn></mn><mo>×</mo><mn>2</mn><mo>)</mo></math></span> surface studied using angle-resolved photoemission

L. Duda; L. S. O. Johansson; B. Reihl; H. W. Yeom; S. Hara; S. Yoshida

doi:10.1103/PhysRevB.61.R2460

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Surface states of the $3 C - SiC (001) - c (4 \times 2)$ surface studied using angle-resolved photoemission

L. Duda, L. S. O. Johansson^*, and B. Reihl

H. W. Yeom

S. Hara and S. Yoshida

Experimentelle Physik I, Universität Dortmund, D-44221 Dortmund, Germany

Department of Applied Chemistry, University of Tokyo, KEK-PF, 1-1 Oho, Tsukuba 305-0801, Japan

Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan

^*Present address: Department of Physics, Karlstad University, S-65188 Karlstad, Sweden.

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Phys. Rev. B 61, R2460(R) – Published 15 January, 2000

DOI: https://doi.org/10.1103/PhysRevB.61.R2460

Abstract

We provide a detailed experimental investigation of the electronic band structure of the $3 C - SiC (001) - c (4 \times 2)$ surface using angle-resolved photoemission and synchrotron radiation. A prominent surface state was identified at $- 1.5 eV$ and referred to the Fermi level, showing a downwards dispersion by about 0.2 eV. Two other surface states were found at the energies $- 0.95 eV$ and $- 2.5 eV .$ The electronic structure is semiconducting and very similar to the one for the $2 \times 1$ reconstruction, proving the close relationship between the $c (4 \times 2)$ and the $2 \times 1$ structures. Comparison to theoretical band structure calculations gives no satisfactory agreeement, leaving the question about the structure of the $c (4 \times 2)$ and the $2 \times 1$ reconstructions still open.

References (17)

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In Ref. , the dispersion of the $S_{1}$ band was found to be 0.3 eV, i.e., 0.1 eV more than in the present work. This can be explained by the statistical spread in the energy position of $S_{1}$ in the previous work.

[c1] Silicon Carbide: A Review of Fundamental Questions and Applications to Current Device Technology, edited by W. J. Choyke, H. Matsunami, and G. Pensl (Akademie Verlag GmbH, Berlin, 1997).

[c2] R. Kaplan, Surf. Sci. 215, 111 (1989).

[c3] M.L. Shek, Surf. Sci. 349, 317 (1996).

[c4] M.L. Shek, K.E. Miyano, Q.-Y. Dong, T.A. Callcott, and D.L. Ederer, J. Vac. Sci. Technol. A 12, 1079 (1994).

[c5] P. Soukiassian, F. Semond, L. Douillard, A. Mayne, G. Dujardin, L. Pizzagalli, and C. Joachim, Phys. Rev. Lett. 78, 907 (1997).

[c6] V.Y. Aristov, L. Douillard, O. Fauchoux, and P. Soukiassian, Phys. Rev. Lett. 79, 3700 (1997).

[c7] S. Hara, W.F.J. Slijkerman, J.F. van der Veen, I. Ohdomari, S. Misawa, E. Sakuma, and S. Yoshida, Surf. Sci. 231, L196 (1990).

[c8] W. Lu, P. Krüger, and J. Pollmann, Phys. Rev. Lett. 81, 2292 (1998).

[c9] A. Catellani, G. Galli, F. Gygi, and F. Pellacini, Phys. Rev. B 57, 12 255 (1998).

[c10] L. Duda, L.S.O. Johansson, B. Reihl, H.W. Yeom, S. Hara, and S. Yoshida, Surf. Sci. 439, 199 (1999).

[c11] B.N. Jensen, S.M. Butorin, T. Kaurila, R. Nyholm, and L.I. Johansson, Nucl. Instrum. Methods Phys. Res. A 394, 243 (1997).

[c12] S. Hara, S. Misawa, S. Yoshida, and Y. Aoyagi, Phys. Rev. B 50, 4548 (1994).

[c13] S. Hara, J. Kitamura, H. Okushi, K. Kajimura, and S. Yoshida (unpublished).

[c14] H.W. Yeom, Y.-C. Chao, I. Matsuda, S. Hara, S. Yoshida, and R.I.G. Uhrberg, Phys. Rev. B 58, 10 540 (1998).

[c15] W. Lu, P. Krüger, and J. Pollmann, Phys. Rev. Lett. 82, 3722 (1999).

[c16] M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing, and J. Pollmann, Phys. Rev. B 53, 13 121 (1996).

[c17] In Ref. , the dispersion of the $S_{1}$ band was found to be 0.3 eV, i.e., 0.1 eV more than in the present work. This can be explained by the statistical spread in the energy position of $S_{1}$ in the previous work.

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Surface states of the $3 C - SiC (001) - c (4 \times 2)$ surface studied using angle-resolved photoemission

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Surface states of the 3C−SiC(001)−c(4×2) surface studied using angle-resolved photoemission

Abstract

References (17)

Surface states of the $3 C - SiC (001) - c (4 \times 2)$ surface studied using angle-resolved photoemission