Core and valence-level photoemission study of the <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi mathvariant="normal">InP</mi><mn></mn><mo>(</mo><mn>001</mn><mo>)</mo><mn></mn><mo>−</mo><mo>(</mo><mn>2</mn><mn></mn><mo>×</mo><mn>1</mn><mo>)</mo><mi mathvariant="normal">S</mi></math></span> surface: Surface structure and electronic states

R. K. Gebhardt; A. B. Preobrajenski; T. Chassé

doi:10.1103/PhysRevB.61.9997

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Core and valence-level photoemission study of the $InP (001) - (2 \times 1) S$ surface: Surface structure and electronic states

R. K. Gebhardt and A. B. Preobrajenski

T. Chassé^*

Wilhelm-Ostwald-Institute of Physical & Theoretical Chemistry, University of Leipzig, Linnéstrasse 2, D-04103 Leipzig, Germany

Wilhelm-Ostwald-Institute of Physical & Theoretical Chemistry, University of Leipzig, Linnéstrasse 2, D-04103 Leipzig, Germany
Institute for Surface Modification, Permoserstrasse 15, D-04303 Leipzig, Germany

^*Author to whom correspondence should be addressed. Electronic address: chasse@rz.uni-leipzig.de

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Phys. Rev. B 61, 9997 – Published 15 April, 2000

DOI: https://doi.org/10.1103/PhysRevB.61.9997

Abstract

The ex situ sulfur treatment of InP(001) by $({NH}_{4})_{2} S$ and subsequent annealing in situ finally results in a sulfur-induced $(2 \times 1)$ superstructure as observed by low-energy electron diffraction. We have investigated the development of the In $4 d,$ P $2 p,$ and S $2 p$ core levels with increasing temperature by using soft x-ray photoelectron spectroscopy. The measured core level shifts are compared with the corresponding data obtained on the $(2 \times 4)$ reconstruction of the clean InP(001) surface. On the basis of the core level data some models of the $(2 \times 1) S$ structure are discussed. Valence-band photoelectron spectra of the $(2 \times 1) S$ and the $(2 \times 4)$ surfaces have been measured in dependence on photon energy at normal emission and derived ${E (k}_{⊥})$ dispersions are analyzed. Although significantly different surface features are observed on both surfaces, there are similarities, which may be interpreted in terms of contributions from similar structural elements, possibly surface dimers.

References (26)

S. Maeyama, M. Sugiyama, S. Heun, and M. Oshima, J. Electron. Mater. 25, 593 (1996).
A. Kapila and V. Malhotra, Appl. Phys. Lett. 62, 1009 (1993).
H. Peisert, P. Streubel, T. Chassé, and R. Szargan, Fresenius J. Anal. Chem. 358, 201 (1997).
D. Gallet and G. Hollinger, Appl. Phys. Lett. 62, 982 (1993).
S. Omori, H. Ishii, and Y. Nihei, Surf. Sci. 381, 165 (1997).
T. Chassé, A. Chassé, H. Peisert, and P. Streubel, Appl. Phys. A: Mater. Sci. Process. 65, 543 (1997).
T. Chassé, H. Peisert, P. Streubel, and R. Szargan, Surf. Sci. 331-333, 434 (1995).
Z. Tian, M.W.C. Dharma-wardana, Z.H. Lu, R. Cao, and L.J. Lewis, Phys. Rev. B 55, 5376 (1997).
S. Hearne and G. Hughes, Appl. Surf. Sci. 123/124, 176 (1998).
M.D. Pashley, Phys. Rev. B 40, 10 481 (1989).
A.C. Ferraz and G.P. Srivastava, Appl. Surf. Sci. 142, 23 (1999).
C.E.J. Mitchell, Ph.D. thesis, Kingston, Ontario, Canada, 1995; C.E.J. Mitchell, I.G. Hill, A.B. McLean, and Z.H. Lu, Appl. Surf. Sci. 104/105, 434 (1996).
F. Lodders, J. Westhof, J.A. Schaefer, H. Höpfinger, A. Goldmann, and S. Witzel, Z. Phys. B: Condens. Matter 83, 263 (1991).
R.K. Gebhardt, S. Sloboshanin, J.A. Schaefer, and T. Chassé, Appl. Surf. Sci. 142, 94 (1999).
S. Schömann and T. Chassé, J. Vac. Sci. Technol. A 16, 2990 (1998).
R. Hesse, T. Chassé, and R. Szargan, Fresenius J. Anal. Chem. 365, 48 (1999).
W.G. Schmidt and F. Bechstedt, Surf. Sci. 409, 474 (1998).
W.G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, Ch. Schultz, and W. Richter, Phys. Rev. B 57, 14 596 (1998).
P.Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer-Verlag, Heidelberg, 1999).
L. Sorba, V. Hinkel, H.U. Middelmann, and K. Horn, Phys. Rev. B 36, 8075 (1987).
A.M. Frisch, P. Vogt, S. Visbeck, F. Willig, W. Braun, W. Richter, J. Bernholc, W.G. Schmidt, and N. Esser, Th. Hannappel (unpublished).
J.R. Chelikowsky and M.L. Cohen, Phys. Rev. B 14, 556 (1976).
G.P. Williams, F. Cerrina, G.J. Lapeyre, J.R. Anderson, R.J. Smith, and J. Hermanson, Phys. Rev. B 34, 5548 (1986).
X. Hou, G. Dong, X. Ding, and X. Wang, J. Phys. C 20, L121 (1987).
S. Sloboshanin, R.K. Gebhardt, J.A. Schaefer, and T. Chassé, Surf. Sci. 431, 252 (1999).
W.R.A. Huff, M. Shimomura, N. Sanada, G. Kaneda, T. Takeuchi, Y. Suzuki, H.W. Yeom, T. Abukawa, S. Kono, and Y. Fukuda, Phys. Rev. B 57, 10 132 (1998).

[c1] S. Maeyama, M. Sugiyama, S. Heun, and M. Oshima, J. Electron. Mater. 25, 593 (1996).

[c2] A. Kapila and V. Malhotra, Appl. Phys. Lett. 62, 1009 (1993).

[c3] H. Peisert, P. Streubel, T. Chassé, and R. Szargan, Fresenius J. Anal. Chem. 358, 201 (1997).

[c4] D. Gallet and G. Hollinger, Appl. Phys. Lett. 62, 982 (1993).

[c5] S. Omori, H. Ishii, and Y. Nihei, Surf. Sci. 381, 165 (1997).

[c6] T. Chassé, A. Chassé, H. Peisert, and P. Streubel, Appl. Phys. A: Mater. Sci. Process. 65, 543 (1997).

[c7] T. Chassé, H. Peisert, P. Streubel, and R. Szargan, Surf. Sci. 331-333, 434 (1995).

[c8] Z. Tian, M.W.C. Dharma-wardana, Z.H. Lu, R. Cao, and L.J. Lewis, Phys. Rev. B 55, 5376 (1997).

[c9] S. Hearne and G. Hughes, Appl. Surf. Sci. 123/124, 176 (1998).

[c10] M.D. Pashley, Phys. Rev. B 40, 10 481 (1989).

[c11] A.C. Ferraz and G.P. Srivastava, Appl. Surf. Sci. 142, 23 (1999).

[c12] C.E.J. Mitchell, Ph.D. thesis, Kingston, Ontario, Canada, 1995; C.E.J. Mitchell, I.G. Hill, A.B. McLean, and Z.H. Lu, Appl. Surf. Sci. 104/105, 434 (1996).

[c13] F. Lodders, J. Westhof, J.A. Schaefer, H. Höpfinger, A. Goldmann, and S. Witzel, Z. Phys. B: Condens. Matter 83, 263 (1991).

[c14] R.K. Gebhardt, S. Sloboshanin, J.A. Schaefer, and T. Chassé, Appl. Surf. Sci. 142, 94 (1999).

[c15] S. Schömann and T. Chassé, J. Vac. Sci. Technol. A 16, 2990 (1998).

[c16] R. Hesse, T. Chassé, and R. Szargan, Fresenius J. Anal. Chem. 365, 48 (1999).

[c17] W.G. Schmidt and F. Bechstedt, Surf. Sci. 409, 474 (1998).

[c18] W.G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, Ch. Schultz, and W. Richter, Phys. Rev. B 57, 14 596 (1998).

[c19] P.Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer-Verlag, Heidelberg, 1999).

[c20] L. Sorba, V. Hinkel, H.U. Middelmann, and K. Horn, Phys. Rev. B 36, 8075 (1987).

[c21] A.M. Frisch, P. Vogt, S. Visbeck, F. Willig, W. Braun, W. Richter, J. Bernholc, W.G. Schmidt, and N. Esser, Th. Hannappel (unpublished).

[c22] J.R. Chelikowsky and M.L. Cohen, Phys. Rev. B 14, 556 (1976).

[c23] G.P. Williams, F. Cerrina, G.J. Lapeyre, J.R. Anderson, R.J. Smith, and J. Hermanson, Phys. Rev. B 34, 5548 (1986).

[c24] X. Hou, G. Dong, X. Ding, and X. Wang, J. Phys. C 20, L121 (1987).

[c25] S. Sloboshanin, R.K. Gebhardt, J.A. Schaefer, and T. Chassé, Surf. Sci. 431, 252 (1999).

[c26] W.R.A. Huff, M. Shimomura, N. Sanada, G. Kaneda, T. Takeuchi, Y. Suzuki, H.W. Yeom, T. Abukawa, S. Kono, and Y. Fukuda, Phys. Rev. B 57, 10 132 (1998).

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Core and valence-level photoemission study of the $InP (001) - (2 \times 1) S$ surface: Surface structure and electronic states

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Core and valence-level photoemission study of the InP(001)−(2×1)S surface: Surface structure and electronic states

Abstract

References (26)

Core and valence-level photoemission study of the $InP (001) - (2 \times 1) S$ surface: Surface structure and electronic states