Export citation

Export citation

Choose format for download:

Download Citation
  • Access by Xinjiang University

Exciton–LO-phonon interaction in zinc-compound quantum wells

Ruisheng Zheng

Mitsuru Matsuura

Tsunemasa Taguchi

  • Department of Electrical and Electronic Engineering, Faculty of Engineering, Yamaguchi University, Ube, 755-8611, Japan

  • Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University, Ube, 755-8611, Japan

  • Department of Electrical and Electronic Engineering, Faculty of Engineering, Yamaguchi University, Ube, 755-8611, Japan

Phys. Rev. B 61, 9960 – Published 15 April, 2000

DOI: https://doi.org/10.1103/PhysRevB.61.9960

Abstract

The properties of optical phonons and excitons in four zinc-compound quantum wells, in which the well layers are made of ternary mixed crystals, are investigated theoretically. The optical phonon frequencies and the electron–LO-phonon coupling constants of the well materials are calculated by using a mixed crystal theory. The interface optical phonon energies and dispersion relations, the exciton binding energies and the exciton–LO-phonon interaction energies are calculated as functions of the well width and the concentration x. The effects of the mixed crystal on the exciton–optical-phonon interaction in the quantum wells are discussed.

References (20)

  1. A. Erçeledi and U. Özdingçer, Solid State Commun. 57, 441 (1986).
  2. M. Matsuura, Phys. Rev. B 37, 6977 (1988).
  3. Z. G. Koinov, J. Phys.: Condens. Matter 3, 6313 (1991).
  4. H. J. Xie and C. Y. Chen, J. Phys.: Condens. Matter 6, 1007 (1994).
  5. R. S. Zheng and M. Matsuura, Phys. Rev. B 57, 1749 (1998).
  6. R. S. Zheng and M. Matsuura, Phys. Rev. B 58, 10 769 (1998).
  7. S. Adachi, J. Appl. Phys. 58, R1 (1985).
  8. R. P. Stanley, J. P. Doran, J. Hegarty, and R. D. Feldman, Physica B 191, 71 (1993).
  9. Y. Yamada, Y. Masumoto, and T. Taguchi, Physica B 191, 83 (1993).
  10. Y. Kawakami, I. Hauksson, H. Stewart, J. Simpson, I. Galbraith, K. A. Prior, and B. C. Cavenett, Phys. Rev. B 48, 11 994 (1993).
  11. N. T. Pelekanos, J. Ding, M. Hagerott, A. V. Nurmikko, H. Luo, N. Samarth, and J. K. Furdyna, Phys. Rev. B 45, 6037 (1992).
  12. R. Cingolani, P. Prete, D. Greco, P. V. Giugno, M. Lomascolo, R. Rinaldi, L. Calcagnile, L. Vanzetti, L. Sorba, and A. Franciosi, Phys. Rev. B 51, 5176 (1995).
  13. J. Ding, M. Hagerott, T. Ishihara, H. Jeon, and A. V. Nurmikko, Phys. Rev. B 47, 10 528 (1993).
  14. T. Taguchi, C. Onodera, Y. Yamada, and Y. Masumato, Jpn. J. Appl. Phys., Part 2 32, L1308 (1999).
  15. S. Adachi and T. Taguchi, Phys. Rev. B 44, 10 633 (1991).
  16. R. S. Zheng and M. Matsuura, Phys. Rev. B 59, 15 422 (1999).
  17. R. S. Zheng and M. Matsuura, Phys. Rev. B 60, 4937 (1999).
  18. T. Taguchi, Y. Kawakami, and Y. Yamada, Physica B 191, 23 (1993).
  19. G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki, Phys. Rev. B 26, 1974 (1982).
  20. Semiconductors—Basic Data, edited by O. Madelung (Springer, New York, 1996).

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation