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Synchrotron-radiation x-ray multiple diffraction applied to the study of electric-field-induced strain in an organic nonlinear optical material

L. H. Avanci* and L. P. Cardoso

J. M. Sasaki, S. E. Girdwood, and K. J. Roberts

D. Pugh and J. N. Sherwood

  • Instituto de Física “Gleb Wataghin,” UNICAMP, Caixa Postal 6165, CEP 13083-970, Campinas, SP, Brazil
  • Pure and Applied Chemistry Department, University of Strathclyde, Glasgow G1 1XL, United Kingdom

  • Centre for Molecular and Interface Engineering, Department of Mechanical and Chemical Engineering, Heriot-Watt University, Riccarton, Edinburgh EH14 4AS, United Kingdom

  • Pure and Applied Chemistry Department, University of Strathclyde, Glasgow G1 1XL, United Kingdom

  • *Author to whom correspondence should be addressed. Present address: Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil. Electronic address: lhavanci@posseidon.if.usp.br
  • Present address: Departamento de Física, Universidade Federal do Ceará, Campus do Pici, CP 6030, CEP 60455-760, Ceará, Brazil.
  • Present address: CCLRC Daresbury Laboratory, Daresbury, Warrington WA 4AD, UK.

Phys. Rev. B 61, 6507 – Published 1 March, 2000

DOI: https://doi.org/10.1103/PhysRevB.61.6507

Abstract

In this work, distortions produced in the unit cell of a MBANP [(-)-2-(α-methylbenzylamino)-5-nitropyridine] nonlinear organic crystal under the influence of an applied electric field, E, are investigated by using synchrotron-radiation x-ray multiple diffraction (XRMD). The method is based in the inherent sensitivity of this technique to determine small changes in the crystal lattice, which provide peak position changes in the XRMD pattern (Renninger scan). A typical Renninger scan shows numerous secondary peaks, each one carrying information on one particular direction within the crystal. The (hkl) peak position in the pattern, for a fixed wavelength, is basically a function of the unit cell lattice parameters. Thus small changes in any parameter due to a strain produced by E give rise to a corresponding variation in the (hkl) peak position and the observed strain is related to the piezoelectric coefficients. The advantage of this method is the possibility of determining more than one piezoelectric coefficient from a single Renninger scan measurement [L. H. Avanci, L. P. Cardoso, S. E. Girdwood, D. Pugh, J. N. Sherwood, and K. J. Roberts, Phys. Rev. Lett. 81, 5426 (1998)]. The method has been applied to the MBANP (monoclinic, point group 2) crystal and we were able to determine four piezoelectric coefficients: |d21|=0.2(1)×1011CN1, |d22|=24.8(3)×1011CN1, |d23|=1.3(1)×1011CN1, and |d25|=5.9(1)×1011CN1. The measurements were carried out using the SRS stations 16.3, Daresbury Laboratory, Warrington, UK.

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