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Epitaxial-strain-stabilized ordering in Au1−xNix alloy thin films grown by MBE

G. Abadias*, I. Schuster, and A. Marty

B. Gilles

  • CEA-Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, SP2M, 17 Avenue des Martyrs, 38054 Grenoble cedex 09, France

  • LTPCM-ENSEEG, Institut National Polytechnique de Grenoble, 38402 Saint Martin d’Hères cedex, France

  • *Present address: Laboratoire de Métallurgie Physique, Université de Poitiers, SP2MI, Téléport 2, bvd Marie et Pierre Curie, 86962 Futuroscope cedex, France. Electronic address: gregory.abadias@lmp.univ-poitiers.fr
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Phys. Rev. B 61, 6495 – Published 1 March, 2000

DOI: https://doi.org/10.1103/PhysRevB.61.6495

Abstract

The influence of the epitaxial strain on the structural evolution with temperature of AuNi metastable alloys thin films is investigated. Samples with different initial configurations (codeposited Au1−xNix solid solutions and artificially layered structures) were grown by molecular-beam epitaxy on different (001)-oriented buffer layers (Au, Pt, and Pd). The epitaxial strain was varied by changing (i) the Ni content of the AuNi layer for a given kind of buffer layer, (ii) the nature of the buffer layer for a fixed Ni content, and (iii) the AuNi layer thickness for a fixed Ni content and buffer layer. The structural evolution upon annealing in the 180–300 °C temperature range was studied by in situ temperature x-ray diffraction as well as high-resolution electron microscopy. It is shown that a modulated structure develops along the growth direction of the AuNi layer, when the temperature reaches 200–240 °C, provided that the residual strain is high enough (>2%). This structure consists of a periodic stacking of 1 Ni-rich plane and 2 or 3 Au-rich planes, depending on the Ni content. The results are explained in terms of a strain-stabilized ordering effect, as supported by energetic calculations based on semiempirical interatomic potentials within the tight-binding scheme.

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Phys. Rev. B 61, 6495– Published 1 March, 2000
  • Received 6 July 1999

© 2000 American Physical Society

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