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Rocking curves of reflection high-energy positron diffraction from hydrogen-terminated Si(111) surfaces

A. Kawasuso, M. Yoshikawa, K. Kojima, and S. Okada

A. Ichimiya

  • Japan Atomic Energy Research Institute, Takasaki Establishment, 1233, Watanuki, Takasaki 370-1292, Japan

  • Department of Applied Physics, Faculty of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan

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Phys. Rev. B 61, 2102 – Published 15 January, 2000

DOI: https://doi.org/10.1103/PhysRevB.61.2102

Abstract

Reflection high-energy positron diffraction experiments have been performed for Si(111) surfaces terminated with atomic hydrogen. From the rocking curve for the specular beam, the first to the fifth Bragg peaks were observed. The curve also showed an unanticipated dip in the total reflection region (θ<1.4°), not found in the numerical analysis for the ideally hydrogen-terminated flat surface. This difference is attributed to the scattering of positrons by roughness and/or SiH3 molecules on the surface, as confirmed in further numerical analysis.

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References (22)

  1. A. Ichimiya, Solid State Phenom. 28&29, 143 (1992/93).
  2. J. Oliva, Ph.D. thesis, University of California at San Diego, 1979.
  3. I. Kanazawa, Y. Itoh, M. Hirose, H. Abe, O. Sueoka, S. Takamura, A. Ichimiya, Y. Murata, F. Komori, K. Fukutani, S. Okada, and T. Hattori, Appl. Surf. Sci. 85, 124 (1995).
  4. A. Kawasuso and S. Okada, Phys. Rev. Lett. 81, 2695 (1998).
  5. T. Ohmi, J. Electrochem. Soc. 143, 2957 (1996).
  6. V. A. Burrows, Y. J. Chabal, G. S. Higashi, K. Raghavachari, and S. B. Christman, Appl. Phys. Lett. 53, 998 (1988).
  7. Y. J. Chabal, G. S. Higashi, K. Raghavachari, and V. A. Burrows, J. Vac. Sci. Technol. A 7, 2104 (1989).
  8. P. O. Hahn, in Thin Films, Interfaces and Phenomena, edited by R. J. Nemanich, P. S. Ho, and S. S. Lau, Materials Research Society Symposia Proceedings No. 54 (MRS, Pittsburgh, 1986), p. 645.
  9. Y. Morita, N. Miki, and H. Tokumoto, Appl. Phys. Lett. 59, 1347 (1991).
  10. Y. Morita, N. Miki, and H. Tokumoto, Appl. Surf. Sci. 60/61, 466 (1992).
  11. Y. Morita, N. Miki, and H. Tokumoto, Ultramicroscopy 42–44, 922 (1992).
  12. A. Ichimiya and S. Mizuno, Surf. Sci. Lett. 191, L765 (1987).
  13. K. C. Pandey, T. Sakurai, and H. D. Hagstrum, Phys. Rev. Lett. 35, 1728 (1975).
  14. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990).
  15. S. Watanabe, N. Nakayama, and T. Ito, Appl. Phys. Lett. 59, 1458 (1991).
  16. R. S. Becker, G. S. Higashi, Y. J. Chabal, and A. J. Becker, Phys. Rev. Lett. 65, 1917 (1990).
  17. H. Tokumoto, Y. Morita, and K. Miki, in Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, edited by R. J. Nemanich, C. R. Helms, M. Hirose, and G. W. Rubloff, Materials Research Society Symposia Proceedings No. 259 (MRS, Pittsburgh, 1992), p. 409.
  18. Y. Morita and H. Tokumoto, in Surface Chemical Cleaning and Passivation for Semiconductor Processing, edited by G. S. Higashi, E. A. Irene, and T. Ohmi, Materials Research Society Symposia Proceedings No. 315 (MRS, Pittsburgh, 1993), p. 491.
  19. A. Ichimiya, Surf. Sci. 192, L893 (1987).
  20. A. Ichimiya, in The Structure of Surfaces III, edited by S. Y. Tong, M. A. Van Hove, K. Takayanagi, and X. D. Xie, Springer Series in Surface Sciences Vol. 24 (Springer-Verlag, Berlin, 1991), p. 162.
  21. A. Ichimiya, Jpn. J. Appl. Phys., Part 1 22, 176 (1983).
  22. P. A. Doyle and P. S. Turner, Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr. 24, 390 (1968).

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Phys. Rev. B 61, 2102– Published 15 January, 2000
  • Received 14 July 1999

© 2000 American Physical Society

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