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Sulfur: A donor dopant for n-type diamond semiconductors

Isao Sakaguchi, Mikka N.-Gamo, Yuko Kikuchi, Eiji Yasu*, and Hajime Haneda

Toshimitsu Suzuki and Toshihiro Ando†

  • Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Corporation (JST), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

  • Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Corporation (JST), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
  • High Technology Research Center, Kansai University, 3-3-35 Yamate-machi, Suita, Osaka 564-8680, Japan

  • *Permanent address: Kubota Co., Japan.
  • †Author to whom correspondence should be addressed. Electronic address: ando@nirim.go.jp
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Phys. Rev. B 60, R2139(R) – Published 15 July, 1999

DOI: https://doi.org/10.1103/PhysRevB.60.R2139

Abstract

Evidence for the donor nature of sulfur in diamond was obtained by introducing hydrogen sulfide into the microwave assisted plasma chemical vapor deposition process. The sulfur was successfully doped into homoepitaxial diamond (100) films, which exhibit n-type conduction by Hall-effect measurements in the temperature range of 250–550 K. The mobility of electrons at room temperature was 597 cm2 V−1 s−1. The ionization energy of 0.38 eV was determined by measuring the carrier concentration as a function of temperature.

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References (16)

  1. A. T. Collins, in Properties and Growth of Diamond, edited by G. Davies (INSPEC, the Institution of Electrical Engineers, London, 1993), p. 263; Mater. Res. Soc. Symp. Proc. 162, 3 (1990).
  2. B. A. Fox et al., Diamond Relat. Mater. 4, 622 (1995).
  3. S. Yamanaka et al., Jpn. J. Appl. Phys., Part 2 37, L1129 (1998).
  4. N. Fujimori, T. Imai, H. Nakahata, H. Shiomi, and Y. Nishibayashi, Mater. Res. Soc. Symp. Proc. 162, 23 (1990).
  5. A. E. Alexenko and B. V. Spitsyn, Diamond Relat. Mater. 1, 705 (1992).
  6. S. Koizumi, M. Kamo, Y. Sato, H. Ozaki, and T. Inuzuka, Appl. Phys. Lett. 71, 1065 (1997).
  7. T. Saito et al., Jpn. J. Appl. Phys., Part 2 37, L543 (1998).
  8. G. D. Barber and W. A. Yarbrough, J. Am. Ceram. Soc. 78, 3390 (1995).
  9. R. O. Carlson, R. N. Hall, and E. M. Pell, J. Phys. Chem. Solids 8, 81 (1959).
  10. G. W. Ludwig, Phys. Rev. 137, A1520 (1959).
  11. W. W. Tyler, J. Phys. Chem. Solids 8, 59 (1959).
  12. I. Sakaguchi, M. N-Gamo, and T. Ando (unpublished).
  13. H. Kiyota et al., Diamond Relat. Mater. 6, 1753 (1997).
  14. A. Reznik, V. Richter, and R. Kalish, Diamond Relat. Mater. 7, 317 (1997).
  15. S. Bohr, R. Haubner, and B. Lux, Diamond Relat. Mater. 4, 133 (1995).
  16. W. Zhu, G. P. Kochanski, and S. Jin, Science 282, 1471 (1998).

Outline

Information

Phys. Rev. B 60, R2139(R)– Published 15 July, 1999
  • Received 12 March 1999

© 1999 American Physical Society

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