Acceptor level of substitutional Ni in diamond

D. M. Hofmann; M. Ludwig; P. Christmann; D. Volm; B. K. Meyer; L. Pereira; L. Santos; E. Pereira

doi:10.1103/PhysRevB.50.17618

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Acceptor level of substitutional Ni in diamond

D. M. Hofmann, M. Ludwig, P. Christmann, D. Volm, and B. K. Meyer

L. Pereira, L. Santos, and E. Pereira

Physik Department E 16, Technical University of Munich, 85747 Garching, Germany

Departamento de Fisica, University of Aveiro, 3800 Aveiro, Portugal

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Phys. Rev. B 50, 17618 – Published 15 December, 1994

DOI: https://doi.org/10.1103/PhysRevB.50.17618

Abstract

Substitutional ${Ni}^{-}$ in synthetic diamonds has been investigated by electron-paramagnetic resonance (EPR) and photo-EPR. The photo-EPR investigation shows that the ${Ni}^{-}$ EPR signal can be diminished by optical illumination, and the threshold energy of 2.47±0.02 eV suggests that the acceptor level is located at 3.03 eV above the valence band. The energy dependence of the optical cross section for the electron ionization $σ_{n}$ was determined from an analysis of the EPR transients.

References (14)

For extensive summary and compilation of data, see, A. Zunger, Solid State Phys. 39, 276 (1986).
R. C. Burns and G. J. Davies, in The Properties of Natural and Synthetic Diamond, edited by J. E. Field (Academic, New York, 1992), p. 395.
A. T. Collins and P. M. Spear, J. Phys. C 16, 963 (1983).
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P. E. Klingsporn, M. D. Bell and W. J. Leivo, J. Appl. Phys. 41, 2977 (1970).
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B. K. Ridley, J. Phys. C 13, 2015 (1980).
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H. Nazare and J. C. Lopes (in press).
A. T. Collins, M. Kamo and Y. Sato, J. Mater. Sci. 5, 2507 (1990).
L. S. Vlasenko, A. A. Lebedev, E. S. Taptygov and V. A. Khramatsov, Pis'ma Zh. Tekh. Fiz. 13, 1322 (1987) [Sov. Phys. Tech. Lett. 13, 553 (1987)].
N. T. Son, A. B. van Oosten, and C. A. J. Ammerlaan, Solid State Commun. 80, 439 (1991).

[c1] For extensive summary and compilation of data, see, A. Zunger, Solid State Phys. 39, 276 (1986).

[c2] R. C. Burns and G. J. Davies, in The Properties of Natural and Synthetic Diamond, edited by J. E. Field (Academic, New York, 1992), p. 395.

[c3] A. T. Collins and P. M. Spear, J. Phys. C 16, 963 (1983).

[c4] J. Isoya, H. Kanda, J. R. Norris, J. Tang and M. K. Bowman, Phys. Rev. B 41, 3905 (1990).

[c5] J. Isoya, H. Kanda and Y. Uchia, Phys. Rev. B 42, 9843 (1990).

[c6] M. Godlewski, Phys. Status Solidi A 90, 11 (1985).

[c7] P. E. Klingsporn, M. D. Bell and W. J. Leivo, J. Appl. Phys. 41, 2977 (1970).

[c8] R. G. Farrer and L. A. Vermeulen, J. Phys. C 5, 2762 (1972).

[c9] B. K. Ridley, J. Phys. C 13, 2015 (1980).

[c10] Semiconductors, Intrinsic Properties of Group IV Elements and III V, II VI and I VII Compounds, edited by O. Madelung, Landolt Börnstein, New Series, Group 3, Vol. 22, Pt. a (Springer Verlag, Berlin, 1982).

[c11] H. Nazare and J. C. Lopes (in press).

[c12] A. T. Collins, M. Kamo and Y. Sato, J. Mater. Sci. 5, 2507 (1990).

[c13] L. S. Vlasenko, A. A. Lebedev, E. S. Taptygov and V. A. Khramatsov, Pis'ma Zh. Tekh. Fiz. 13, 1322 (1987) [Sov. Phys. Tech. Lett. 13, 553 (1987)].

[c14] N. T. Son, A. B. van Oosten, and C. A. J. Ammerlaan, Solid State Commun. 80, 439 (1991).

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