- Access by Xinjiang University
Change of electronic structures with carrier doping in the highly correlated electron system
Phys. Rev. B 48, 511 – Published 1 July, 1993
DOI: https://doi.org/10.1103/PhysRevB.48.511
Abstract
A perovskitelike solid solution can be viewed as a hole-doped Mott-Hubbard insulator or strongly correlated metal that is derived from the parent insulator with the Mott-Hubbard gap of ∼1 eV. The Mott insulator-metal transition is observed around the hole-doping level of x∼0.35 in . Change of electronic structures with hole doping has been investigated by measurements of optical spectra in a wide photon-energy range. In the insulating phase with x<0.4, the spectral weight is transferred from the Mott-Hubbard gap excitations to the inner-gap region with hole doping, giving rise to a gradual closing of the charge gap. Even in the doping-induced metallic region (x≥0.4), the midinfrared absorption still dominates the lower-lying Drude absorption, perhaps due to the effects of the impurity potential and electron correlation on the narrow 3d. band. The results were argued in comparison with the case of the high- cuprates.
References (27)
- D. A. MacLean and J. E. Greedan, Inorg. Chem. 20, 1025 (1981).
- D. A. MacLean, K. Seto and J. E. Greedan, J. Solid State Chem. 40, 241 (1981).
- C. W. Turner, M. F. Collins and J. E. Greedan, J. Magn. Magn. Mater. 23, 265 (1981).
- F. Lichtenberg, D. Widmer, J. G. Bednorz, T. Williams and A. Reller, Z. Phys. B 82, 211 (1991).
- J. Zaanen, G. A. Sawatzky and J. W. Allen, Phys. Rev. Lett. 55, 418 (1985).
- S. Uchida, T. Ido, H. Takagi, T. Arima, Y. Tokura and S. Tajima, Phys. Rev. B 43, 7942 (1991).
- S. L. Cooper, G. A. Thomas, J. Orenstein, D. H. Rapkine, A. J. Millis, S-W. Cheong, A. S. Cooper and Z. Fisk, Phys. Rev. B 41, 11605 (1990).
- T. Arima, Y. Tokura, and S. Uchida (unpublished).
- H. Romberg, M. Alexander, N. Nücker, P. Adelmann and J. Fink, Phys. Rev. B 42, 8768 (1990).
- C. T. Chen et al., Phys. Rev. Lett. 66, 104 (1991).
- D. A. MacLean, Hok-Nam Ng and J. E. Greedan, J. Solid State Chem. 30, 35 (1979).
- D. A. Crandles, T. Timusk and J. E. Greedan, Phys. Rev. B 44, 13250 (1991); D. A. Crandles, J. D. Garrett, T. Timusk and J. E. Greedan, Physica C 201, 407 (1992).
- J. D. Garrett, J. E. Greedan and D. A. MacLean, Mater. Res. Bull. 16, 145 (1981).
- J. P. Goral, J. E. Greedan and D. A. MacLean, J. Solid State Chem. 43, 244 (1982).
- For a review on the filling control in layered cuprate compounds, see, for example, Y. Tokura and T. Arima, Jpn. J. Appl. Phys. 29, 2388 (1990).
- J. E. Sunstrom, S. M. Kauzlarich and P. Klavins, Chem. Mater. 4, 346 (1992).
- Y. Okada and Y. Tokura (unpublished).
- Y. Tokura, J. Phys. Chem. Solids 53, 1619 (1992).
- Y. Tokura, Y. Taguchi, Y. Okada, Y. Fujishima, T. Arima, K. Kumagai and Y. Iye, Phys. Rev. Lett. 70, 2126 (1993).
- Y. Fujishima, Y. Tokura, T. Arima and S. Uchida, Phys. Rev. B 46, 11167 (1992).
- K. Kumagai, T. Suzuki, Y. Taguchi, Y. Okada, Y. Fujishima, and Y. Tokura, Phys. Rev. B (to be published).
- in the x = 0 sample is rather sensitive to a slight offstoichiometry of the sample, or equivalently to presence of a few hole-type carriers. The YTiO which was synthesized in a stronger reducing condition and hence better stoichiometrically showed a slightly higher app 30 K).
- T. Moriya and H. Hasegawa, J. Phys. Soc. Jpn. 48, 1490 (1980).
- M. Couzi and P. Vam Huong, J. Chem. Phys. 69, 1339.
- J. B. Torrance, P. Lacorre, C. Asavaroengchai and R. M. Metzger, Physica C 182, 351 (1991).
- Y. Tokura et al., Phys. Rev. B 41, 11657 (1990); S. L. Cooper et al., ibid. 42, 10785 (1990).
- L. F. Mattheiss, Phys. Rev. B 6, 4718 (1972).