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Ground-state configuration of double acceptors in silicon and germanium

Andreas Giesekus and L. M. Falicov

  • Department of Physics, University of California, Berkeley, California 94720

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Phys. Rev. B 42, 8975 – Published 15 November, 1990

DOI: https://doi.org/10.1103/PhysRevB.42.8975

Abstract

The ground-state manifold of double-acceptor impurities in Si and Ge shows small splittings. An explanation of this fine structure is presented. It is based on a calculation containing tight-binding p functions at the top of the valence band. The approach takes spin-orbit coupling and hole-hole interaction fully into account. The results indicate that the various experimentally observed orderings of levels may be explained by a short-range hole-hole nearest-neighbor intersite interaction that, because of dynamical effects, may in some cases be attractive.

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Phys. Rev. B 42, 8975– Published 15 November, 1990
  • Received 29 May 1990

© 1990 American Physical Society

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