Long-lived spatially indirect excitons in coupled GaAs/<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mrow><mi mathvariant="italic">x</mi></mrow></msub></mrow></math></span><span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi mathvariant="normal">−</mi><mi mathvariant="italic">x</mi></mrow></msub></mrow></math></span>As quantum wells

J. E. Golub; K. Kash; J. P. Harbison; L. T. Florez

doi:10.1103/PhysRevB.41.8564

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Long-lived spatially indirect excitons in coupled GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As quantum wells

J. E. Golub, K. Kash, J. P. Harbison, and L. T. Florez

Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701-7040

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Phys. Rev. B 41, 8564(R) – Published 15 April, 1990

DOI: https://doi.org/10.1103/PhysRevB.41.8564

Abstract

We present nanosecond time-resolved measurements of the low-temperature photoluminescence in coupled GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As quantum wells. Working with 10.0-nm and 15.0-nm GaAs quantum wells coupled through a 3.0-nm ${Al}_{0.3}$ ${Ga}_{0.7}$ As barrier layer, we observe spatially indirect excitons with lifetimes in excess of 200 nsec—an enhancement of more than 2 orders of magnitude over the lifetime of the spatially direct exciton. As a result, extremely cold GaAs exciton gases become possible, a prerequisite for testing recent predictions of quantum-statistical behavior in this system.

References (21)

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H. Q. Le, J. J. Zayhowski and W. D. Goodhue, Appl. Phys. Lett. 50, 1518 (1987).
J. E. Golub, P. F. Liao, D. J. Eilenberger, J. P. Harbison, L. T. Florez and Yehiam Prior, Appl. Phys. Lett. 53, 2584 (1988).
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[c1] Y. J. Chen, E. S. Koteles, B. S. Elman and C. A. Armiento, Phys. Rev. B 36, 4562 (1987).

[c2] H. Q. Le, J. J. Zayhowski and W. D. Goodhue, Appl. Phys. Lett. 50, 1518 (1987).

[c3] J. E. Golub, P. F. Liao, D. J. Eilenberger, J. P. Harbison, L. T. Florez and Yehiam Prior, Appl. Phys. Lett. 53, 2584 (1988).

[c4] J. E. Golub, P. F. Liao, D. J. Eilenberger, J. P. Harbison and L. T. Florez, Solid State Commun. 72, 372 (1989).

[c5] M. Krahl, J. Christen, D. Bimberg, G. Weimann and W. Schlapp, Appl. Phys. Lett. 52, 798 (1988).

[c6] H. Q. Le, J. V. Hryniewicz, W. D. Goodhue and V. A. Mims, Opt. Lett. 13, 859 (1988).

[c7] G. Livescu, A. M. Fox, D. A. B. Miller, T. Sizer, W. H. Knox, A. C. Gossard and J. H. English, Phys. Rev. Lett. 63, 438 (1989).

[c8] D. Y. Oberli, J. Shah, T. C. Damen, C. W. Tu, T. Y. Chang, D. A. B. Miller, J. E. Henry, R. F. Kopf, N. Sauer and A. E. DiGiovanni, Phys. Rev. B 40, 3028 (1989).

[c9] T. B. Norris, N. Vodjdani, B. Vinter, C. Weisbuch and G. A. Mourou, Phys. Rev. B 40, 1392 (1989).

[c10] M. N. Islam, R. L. Hillman, D. A. B. Miller, D. S. Chemla, A. C. Gossard and J. H. English, Appl. Phys. Lett. 50, 1098 (1987).

[c11] J. W. Little, J. K. Whisnant, R. P. Leavitt and R. A. Wilson, Appl. Phys. Lett. 51, 1786 (1987).

[c12] S. Ikeda, A. Shimizu and T. Hara, Appl. Phys. Lett. 55, 1155 (1989).

[c13] S. Charbonneau, M. L. W. Thewalt, Emil S. Koteles and B. Elman, Phys. Rev. B 38, 6287 (1988).

[c14] T. Fukuzawa, S. S. Kano, T. K. Gustafson, and T. Ogawa, in Fourth Conference on Modulated Semiconductor Structures, Ann Arbor, 1989 [Surf. Sci. (to be published) ].

[c15] F. M. Peeters and J. E. Golub (unpublished).

[c16] Yu. E. Lozovik and V. I. Yudson, Zh. Eksp. Teor. Fiz. 71, 738 (1976) [Sov. Phys. JETP 44, 389 (1976)].

[c17] S. I. Shevchenko, Fiz. Nizk. Temp. 2, 505 (1976) [Sov. J. Low Temp. Phys. 2, 251 (1976)].

[c18] E. O. Goebel and O. Hildebrand, Phys. Status Solidi (b) 88, 645 (1978).

[c19] E. E. Mendez, in Physics and Applications of Quantum Wells and Superlattices, edited by E. E. Mendez and K. von Klitzing, NATO Advanced Study Institute, Series B Physics (Plenum, New York, 1987), Vol. 170.

[c20] J. Kusano, Y. Segawa, Y. Aoyagi, S. Namba and H. Okamoto, Phys. Rev. B 40, 1685 (1989).

[c21] J. Feldman, G. Peter, E. O. Gobel, P. Dawson, K. Moore, C. Foxon and R. J. Elliott, Phys. Rev. Lett. 59, 2337 (1987).

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Long-lived spatially indirect excitons in coupled GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As quantum wells

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Long-lived spatially indirect excitons in coupled GaAs/AlxGa1−xAs quantum wells

Abstract

References (21)

Long-lived spatially indirect excitons in coupled GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As quantum wells