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Two-level approach to saturation properties in semiconductor materials
Phys. Rev. B 37, 1237 – Published 15 January, 1988
DOI: https://doi.org/10.1103/PhysRevB.37.1237
Abstract
Saturation properties of absorption, dispersion, and mixing susceptibilities in semiconductors have been described using the density matrix approach. This model, which takes into account both intraband thermalization and interband relaxation including Auger recombination, allows for numerical computation of the susceptibilities whatever the temperature and laser intensity are. As a simplification, an equivalent two-level system is derived which represents very well absorption and mixing susceptibilities for any laser wavelength, dispersion being correctly described by this model only when the pump frequency is close to or smaller than the band-gap energy. Such an equivalence is very easy to handle and allows for great simplification when the susceptibilities are introduced into the propagation equations.
References (15)
- A. F. Gibson, C. A. Rosito, C. A. Raffo and M. F. Kimmit, Appl. Phys. Lett. 21, 356 (1972).
- B. S. Wherrett and N. A. Higgins, Proc. R. Soc. London, Ser. A 379, 69 (1982).
- P. Roussignol, D. Ricard, J. Lukasik and C. Flytzanis, J. Opt. Soc. Am. B 4, 5 (1987).
- D. A. B. Miller, C. T. Seaton, M. E. Prise and S. D. Smith, Phys. Rev. Lett. 47, 197 (1981).
- M. Yamada and Y. Suematsu, J. Appl. Phys. 52, 2653 (1981).
- N. C. Kothari and R. Frey, Phys. Rev. A 34, 2013 (1986).
- M. Asada and Y. Suematsu, IEEE J. Quantum Electron. QE-21, 434 (1985).
- D. J. Erskine, A. J. Taylor and C. L. Tang, Appl. Phys. Lett. 45, 54 (1984).
- J. S. Blakemore, Semiconductor Statistics (Pergamon, Oxford, 1962).
- G. P. Agrawal and H. J. Carmichael, Opt. Acta 27, 651 (1980).
- H. Haken, in Optical Instabilities, edited by R. W. Boyd, M. G. Raymer, and L. M. Narducci (Cambridge University Press, London, 1986).
- M. T. Tavis, IEEE J. Quantum Electron. QE-19, 1302 (1983).
- M. Yamanishi and Y. Lee, IEEE J. Quantum Electron. QE-23, 367 (1987).
- H. J. Eichler, Opt. Acta 24, 631 (1977).
- F. de Rougemont, R. Frey, P. Roussignol, D. Ricard and C. Flytzanis, Appl. Phys. Lett. 50, 1619 (1987).