Electronic transport in molecular-beam-epitaxy-grown <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mrow><mi mathvariant="normal">x</mi></mrow></msub></mrow></math></span><span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi mathvariant="normal">−</mi><mi mathvariant="normal">x</mi></mrow></msub></mrow></math></span>As

M. Zachau; F. Koch; G. Weimann; W. Schlapp

doi:10.1103/PhysRevB.33.8564

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Electronic transport in molecular-beam-epitaxy-grown ${Al}_{x}$ ${Ga}_{1 - x}$ As

M. Zachau and F. Koch

G. Weimann and W. Schlapp

Physik-Department, Technische Universitat München, D-8046 Garching bei München, Federal Republic of Germany

Forschungsinstitut der Deutschen Bundespost, D-6100 Darmstadt, Federal Republic of Germany

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Phys. Rev. B 33, 8564 – Published 15 June, 1986

DOI: https://doi.org/10.1103/PhysRevB.33.8564

Abstract

We have studied magnetotransport and cyclotron resonance of electrons in interfacial subbands of a series of remote-doped ${Al}_{0.35}$ ${Ga}_{0.65}$ As- ${Al}_{x}$ Ga ${}_{1 - x}$ As heterostructures with x up to 0.26. The experiments allow an accurate determination of $m_{c}^{*}$ (x) and define an upper limit of the strength of the alloy disorder scattering.

References (11)

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[c1] H. J. Lee, L. Y. Juravel, J. C. Woolley and A. J. Spring Thorpe, Phys. Rev. B 21, 659 (1980).

[c2] N. Lifshitz, A. Jayaraman, R. A. Logan and H. C. Card, Phys. Rev. B 21, 670 (1980).

[c3] W. Ossau, Ph.D. thesis, University of Würzburg, 1982.

[c4] T. Ando, J. Phys. Soc. Jpn. 51, 3893 (1982).

[c5] F. Stern and S. Das Sarma, Phys. Rev. B 30, 840 (1984).

[c6] V. Dolgopolov, C. Mazureiaa, A. Zrenner and F. Koch, J. Appl. Phys. 55, 4280 (1984).

[c7] T. Ando, J. Phys. Soc. Jpn. 51, 3900 (1982).

[c8] W. Walukiewicz, H. E. Ruda, J. Lagowski and H. C. Gatos, Phys. Rev. B 30, 4571 (1984).

[c9] G. Weimann and W. Schlapp, Appl. Phys. Lett. 46, 411 (1985).

[c10] G. Bastard, Appl. Phys. Lett. 43, 591 (1984).

[c11] G. Abstreiter, J. P. Kotthaus, J. F. Koch and G. Dorda, Phys. Rev. B 14, 2480 (1976).

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Electronic transport in molecular-beam-epitaxy-grown ${Al}_{x}$ ${Ga}_{1 - x}$ As

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Electronic transport in molecular-beam-epitaxy-grown AlxGa1−xAs

Abstract

References (11)

Electronic transport in molecular-beam-epitaxy-grown ${Al}_{x}$ ${Ga}_{1 - x}$ As