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Valence- and conduction-band structure of the sapphire (102) surface

W. J. Gignac and R. Stanley Williams

Steven P. Kowalczyk

  • Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, California 90024

  • Rockwell International Corporation, Microelectronics Research and Development Center, Thousand Oaks, California 91360

Phys. Rev. B 32, 1237 – Published 15 July, 1985

DOI: https://doi.org/10.1103/PhysRevB.32.1237

Abstract

X-ray photoelectron (XPS) and electron-energy-loss spectroscopies have been employed to investigate the valence- and conduction-band densities of states of the sapphire (102) surface. The photoemission spectrum of the valence-band region has been adjusted to remove cross-section effects and compared to the recent theoretical density of states calculated by Ciraci and Batra. The energy-loss data have been used to determine the bulk-plasmon energy of sapphire, 24.0±0.3 eV, as well as the locations of eight regions of high conduction-bandstate density within 20 eV above the conduction-band minimum. One of these regions is an empty surface state 4.0 eV below the conduction-band minimum. Several high-binding-energy satellites in the XPS core-level spectra are reported and interpreted in terms of energy losses to plasmons and interband transitions.

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