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Origin of the current oscillations in GaAs-AlGaAs tunnel junctions
Phys. Rev. B 31, 4080(R) – Published 15 March, 1985Erratum Phys. Rev. B 32, 1355 (1985)
DOI: https://doi.org/10.1103/PhysRevB.31.4080
Abstract
This Rapid Communication reviews different interpretations provided to understand the current oscillations observed in reverse-bias GaAs-AlGaAs tunnel junctions. It is seen that the ballistic picture is contradicted by the experimental conditions. Another interpretation based on phonon-assisted tunneling appears unsatisfactory with regard to several experimental observations. An explanation based on a space-charge effect induced by phonon generation is proposed. This theoretical interpretation is in good agreement with the experiment and provides a general basis for the understanding of similar effects encountered previously in analog structures.
Erratum
Erratum: Origin of the current oscillations in GaAs-AlGaAs tunnel junctions
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