Temperature-dependent electronic excitations of the Si(111)2×1 surface

N. J. DiNardo; J. E. Demuth; W. A. Thompson; Ph. Avouris

doi:10.1103/PhysRevB.31.4077

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Temperature-dependent electronic excitations of the Si(111)2×1 surface

N. J. DiNardo, J. E. Demuth, W. A. Thompson, and Ph. Avouris

IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10498

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Phys. Rev. B 31, 4077(R) – Published 15 March, 1985

DOI: https://doi.org/10.1103/PhysRevB.31.4077

Abstract

Electron-energy-loss measurements on cleaved Si(111) 2×1 surfaces show a temperature dependence in the position and shape of the absorption edge of the ∼0.5-eV surface-state transition. The observed trends in the onset line shape provide experimental evidence for surface-state excitonic polarons. In addition, a lower-lying, defect-related surface-state transition at ∼0.35 eV is studied at low temperature and found to have localized character.

References (18)

J. E. Demuth, B. N. J. Persson and A. J. Schell-Sorokin, Phys. Rev. Lett. 51, 2214 (1983).
R. M. Tromp, L. Smit, and F. J. van der Veen, Phys. Rev. Lett. 51, 1672 (1983); Phys. Rev. B 30, 6235 (1984).
K. C. Pandey, Phys. Rev. Lett. 47, 1913 (1981); ibid. 49, 223 (1982).
C. D. Chen, A. Selloni, and E. Tosatti (unpublished).
D. Haneman, Phys. Rev. 121, 1093 (1961).
G. Chiarotti, S. Nannarone, R. Pastore and P. Chiaradia, Phys. Rev. B 4, 3398 (1971).
P. Chiaradia, G. Chiarotti, S. Selci and Zhu Zhi-Ji, Surf. Sci. 132, 62 (1983); P. Chiaradia, A. Cricenti, S. Selci, and G. Chiarotti (unpublished).
Marjorie A. Olmstead and Nabil M. Amer. Phys. Rev. Lett. 52, 1148 (1984).
J. Assmann and W. Mönch, Surf. Sci. 99, 34 (1980).
R. Matz, H. Luth and A. Ritz, Solid State Commun. 46, 343 (1983).
J. E. Rowe, H. Froitzheim and H. Ibach, Surf. Sci. 48, 44 (1975).
J. E. Demuth and B. N. J. Persson, J. Vac. Sci. Technol. B 2, 384 (1984).
H. Ibach, K. Horn, R. Dorn and H. Luth, Surf. Sci. 38, 433 (1973).
J. E. Demuth, N. J. DiNardo and W. A. Thompson, Phys. Rev. B 31, 1130 (1985).
See, for example, Y. Toyozawa, Prog. Theor. Phys. 27, 89 (1962); D. M. Burland, U. Konzelmann and R. M. Mcfarlane, J. Chem. Phys. 67, 1926 (1977).
K. C. Pandey (private communication).
R. Imbihl, W. A. Thompson, and J. E. Demuth (unpublished).
R. M. Hochstrasser and J. D. Whiteman, J. Chem. Phys. 56, 5945 (1972).

[c1] J. E. Demuth, B. N. J. Persson and A. J. Schell-Sorokin, Phys. Rev. Lett. 51, 2214 (1983).

[c2] R. M. Tromp, L. Smit, and F. J. van der Veen, Phys. Rev. Lett. 51, 1672 (1983); Phys. Rev. B 30, 6235 (1984).

[c3] K. C. Pandey, Phys. Rev. Lett. 47, 1913 (1981); ibid. 49, 223 (1982).

[c4] C. D. Chen, A. Selloni, and E. Tosatti (unpublished).

[c5] D. Haneman, Phys. Rev. 121, 1093 (1961).

[c6] G. Chiarotti, S. Nannarone, R. Pastore and P. Chiaradia, Phys. Rev. B 4, 3398 (1971).

[c7] P. Chiaradia, G. Chiarotti, S. Selci and Zhu Zhi-Ji, Surf. Sci. 132, 62 (1983); P. Chiaradia, A. Cricenti, S. Selci, and G. Chiarotti (unpublished).

[c8] Marjorie A. Olmstead and Nabil M. Amer. Phys. Rev. Lett. 52, 1148 (1984).

[c9] J. Assmann and W. Mönch, Surf. Sci. 99, 34 (1980).

[c10] R. Matz, H. Luth and A. Ritz, Solid State Commun. 46, 343 (1983).

[c11] J. E. Rowe, H. Froitzheim and H. Ibach, Surf. Sci. 48, 44 (1975).

[c12] J. E. Demuth and B. N. J. Persson, J. Vac. Sci. Technol. B 2, 384 (1984).

[c13] H. Ibach, K. Horn, R. Dorn and H. Luth, Surf. Sci. 38, 433 (1973).

[c14] J. E. Demuth, N. J. DiNardo and W. A. Thompson, Phys. Rev. B 31, 1130 (1985).

[c15] See, for example, Y. Toyozawa, Prog. Theor. Phys. 27, 89 (1962); D. M. Burland, U. Konzelmann and R. M. Mcfarlane, J. Chem. Phys. 67, 1926 (1977).

[c16] K. C. Pandey (private communication).

[c17] R. Imbihl, W. A. Thompson, and J. E. Demuth (unpublished).

[c18] R. M. Hochstrasser and J. D. Whiteman, J. Chem. Phys. 56, 5945 (1972).

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Temperature-dependent electronic excitations of the Si(111)2×1 surface

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