- Access by Xinjiang University
Binding energy of the 2-like level of a hydrogenic donor in GaAs-As quantum-well structures
Phys. Rev. B 31, 4006 – Published 15 March, 1985
DOI: https://doi.org/10.1103/PhysRevB.31.4006
Abstract
Recently we reported a calculation of the binding energy of the 2-like level of a hydrogenic donor associated with the first conduction subband in a GaAs-As quantum-well structure. It was found that the value of the binding energy of this level decreased as the well width was reduced, and became zero for a well width of about 650 Å. In this Brief Report we present results which demonstrate that this peculiar behavior of the 2 state is due to the fact that it is closely associated with the second electron subband, and remains bound with respect to it (with increasing binding energy) as the well width is reduced.
References (8)
- G. Bastard, Phys. Rev. B 24, 4714 (1981).
- C. Mailhiot, Yia-Chung Chang and T. C. McGill, Phys. Rev. B 26, 4449 (1982).
- Ronald L. Greene and K. K. Bajaj, Solid State Commun. 45, 825 (1983).
- W. T. Masselink, Yia-Chung Chang and H. Markoc, Phys. Rev. B 28, 7373 (1983).
- S. Chaudhuri, Phys. Rev. B 28, 4480 (1983).
- Kazuyoshi Tanaka, Masataka Nagaoka and Tokio Yamabe, Phys. Rev. B 28, 7068 (1983).
- S. Huzinaga, J. Chem. Phys. 42, 1293 (1965).
- Qi-Gao Zhu and Herbert Kroemer, Phys. Rev. B 27, 3519 (1983).