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Electric-field-induced dissociation of excitons in semiconductor quantum wells

J. A. Brum and G. Bastard

  • Groupe de Physique des Solides de l’Ecole Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France

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Phys. Rev. B 31, 3893 – Published 15 March, 1985

DOI: https://doi.org/10.1103/PhysRevB.31.3893

Abstract

We have calculated the effect of a constant electric field on the energy position of the exciton ground state in semiconductor single-quantum wells. We discuss only the case of quantum wells where electron and hole wave functions are mostly localized within the same layer at zero electric field (e.g., GaAs-Ga1−xAlxAs structures). In such quantum wells an electric field applied parallel to the growth axis polarizes free-electron and -hole wave functions in opposite directions and therefore weakens the excitonic binding. Our theoretical results are in qualitative agreement with recent absorption data.

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Phys. Rev. B 31, 3893– Published 15 March, 1985
  • Received 29 May 1984

© 1985 American Physical Society

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