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Electronic charge distribution in silicon
Phys. Rev. B 31, 3846 – Published 15 March, 1985
DOI: https://doi.org/10.1103/PhysRevB.31.3846
Abstract
The structure factors of eight high-order [0.64≤(sinθ)/λ≤1.56 A] reflections were measured for a number of wavelengths to an accuracy of a few thousandths of an electron per atom. Most of these have never been measured before to this level of accuracy. A monolithic double-crystal diffractometer of novel design was employed in measuring thin-crystal Laue-case rocking curves which exhibit fine structure strongly dependent on . Computer fitting of the theoretical curve to the measured one yields . An energy-dispersive mode of operation allowed simultaneous measurements of the rocking curves of a whole family of planes to be carried out. The values obtained, while in excellent agreement with previously measured and theoretical ones for (sinθ)/λ<1 A, are consistently and increasingly lower than the theoretical relativistic Hartree-Fock values for (sinθ)/λ>1 A. This systematic trend most probably reflects the inadequacy of the Debye parameter B calculated from medium- and low-order ’s for high-order reflections. Assuming different vibrational amplitudes for intermediate- and inner-shell electrons, our data yield A for reflections up to 880 [(sinθ)/λ=1.04 A], in excellent agreement with previous measurements, and A for reflections higher than 10 10 0 [(sinθ)/λ≥1.30 A]. We also find no anharmonic contribution to the temperature factor of within the limit of accuracy of the experiment, in good agreement with previous x-ray measurements and some neutron measurements, but in contradiction to some of the neutron forbidden-222-reflection results.
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