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Resonance Raman scattering by LO phonons in CdxHg1xTe at the E0+Δ0 gap

José Menéndez and Manuel Cardona

Lev K. Vodopyanov

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Federal Republic of Germany

  • Academy of Sciences of the Union of Soviet Socialist Republics, P. N. Lebedev Physical Institute, Leninsky Prospect 53, 117924 Moscow, U.S.S.R.

Phys. Rev. B 31, 3705 – Published 15 March, 1985

DOI: https://doi.org/10.1103/PhysRevB.31.3705

Abstract

We have studied the resonance of the first- and second-order Raman scattering by LO phonons in CdxHg1xTe for x≊1 near the E0+Δ0 gap. We show that the effect of alloying is a shift and a broadening of the resonances which can be compared with calculations of the compositional dependence of the gaps. The mechanisms contributing to one-LO-phonon and two-LO-phonon scattering are discussed and experimentally investigated. We give absolute values for the Raman efficiencies and compare them with theory.

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