Electronic and vibronic states of the acceptor–bound-exciton complex (<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msup><mrow><mi>A</mi></mrow><mrow><mn>0</mn></mrow></msup></mrow></math>,X) in CdS. III. High-density electronic resonant Raman scattering at the (<math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msup><mrow><mi>A</mi></mrow><mrow><mn>0</mn></mrow></msup></mrow></math>,X) complex

J. Gutowski; I. Broser

doi:10.1103/PhysRevB.31.3621

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Electronic and vibronic states of the acceptor–bound-exciton complex ( $A^{0}$ ,X) in CdS. III. High-density electronic resonant Raman scattering at the ( $A^{0}$ ,X) complex

J. Gutowski and I. Broser

Institut für Festkörperphysik II, Technische Universitat Berlin, Hardenbergstrasse 36, D-1000 Berlin 12, Germany

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Phys. Rev. B 31, 3621 – Published 15 March, 1985

DOI: https://doi.org/10.1103/PhysRevB.31.3621

Abstract

A very strong high-density resonant Raman effect in the bound-exciton region of CdS is explained by electronic B→A hole conversion within the ( $A^{0}$ ,X) configuration. The ( $A^{0}$ , $X_{B}$ ) states with one hole from the second B valence band analyzed in paper II of this series [J. Gutowski, preceding paper, Phys. Rev. B 31, 3611 (1985)] act as resonance terms for the incoming photon while the ( $A^{0}$ , $X_{A}$ ) ground state, involving two A valence-band holes and occupied after the conversion process, forms a resonance term for the scattered light. On the one hand, our model developed in the preceding paper for the ( $A^{0}$ ,X) complex in CdS is able to explain the scattering process excellently. On the other hand, the resonant Raman scattering is a useful tool for analyzing the highly sensitive dependence of the ( $A^{0}$ ,X) configuration on the excitation parameters. Thus the spatial dimensions of the complex alter with the energy that is available for its creation. Moreover, high-density excitation results in a stimulation of the Raman transitions. Laser activity of the Raman light becomes observable above a certain threshold of the excitation intensity.

References (26)

R. Baumert, I. Broser, J. Gutowski and A. Hoffmann, Phys. Rev. B 27, 6263 (1983).
J. Gutowski, preceding paper, Phys. Rev. B 31, 3611 (1985).
P. Y. Yu, Phys. Rev. B 20, 5286 (1979).
E. Cohen, R. A. Street and A. Muranevich, Phys. Rev. B 28, 7115 (1983).
R. G. Ulbrich, N. V. Hien and C. Weisbuch, Phys. Rev. Lett. 46, 53 (1981).
P. Y. Yu, M. H. Pilkuhn and F. Evangelisti, Solid State Commun. 25, 371 (1978).
D. Munz and M. H. Pilkuhn, Solid State Commun. 36, 205 (1980).
T. Ho ¨nig and J. Gutowski, presentation at the 5th General Conference of the Condensed Matter Division of the EPS, Berlin, Germany, 1985 (unpublished).
J. J. Song and W. C. Wang, J. Appl. Phys. 55, 660 (1984).
C. H. Henry and K. Nassau, Phys. Rev. B 2, 997 (1970).
C. H. Henry, K. Nassau, J. W. Shiever, Phys. Rev. B 4, 2453 (1971); Y. Shiraki, T. Shimada and K. F. Komatsubara, J. Phys. Chem. Solids 38, 937 (1977).
H. Malm and R. R. Haering, Can. J. Phys. 49, 2432 (1971).
M. V. Klein, in Light Scattering in Solids, Vol. 8 of Topics in Applied Physics, edited by M. Cardona (Springer, Berlin, 1975), p. 147.
P. Y. Yu, in Excitons, Vol. 14 of Topics in Current Physics, edited by K. Cho (Springer, Berlin, 1979), p. 211.
E. Burstein, A. Pinczuk, and S. Buchner, Proceedings of the 14th International Conference on the Physics of Semiconductors, Edinburgh 1978, edited by B. L. H. Wilson (Page Brothers Ltd., Norwich, 1979), p. 1231.
W. Brenig, R. Zeyher and J. L. Birman, Phys. Rev. B 6, 4617 (1972).
T. C. Damen and J. Shah, Phys. Rev. Lett. 27, 1506 (1971).
Y. Nishina, N. Kuroda, M. Yashiro, K. Nakaoka, and T. Goto, in Proceedings of the 1975 Oji Seminar on the Physics of Highly Excited States in Solids, edited by M. Ueta and Y. Nishina (Springer, New York, 1976), p. 327.
B. Stébé and G. Munschy, Phys. Status Solidi B 88, 713 (1978).
W. Ungier and M. Suffczynski, Phys. Rev. B 27, 3656 (1983).
W. Ungier, M. Suffczynski and J. Adamowski, Phys. Rev. B 24, 2109 (1981).
J. J. Hopfield, in Proceedings of the 7th International Conference on the Physics of Semiconductors, Paris, 1964 (Dunod, Paris, 1965), p. 725.
D. G. Thomas and J. J. Hopfield, Phys. Rev. 128, 2135 (1962); A. Roussel, thesis for diploma, Institut fu ¨r Festko ¨rperphysik, Technische Universita ¨t, Berlin, 1979.
H. Venghaus, S. Suga and K. Cho, Phys. Rev. B 16, 4419 (1977).
I. Broser and M. Rosenzweig, Phys. Rev. B 22, 2000 (1980).
M. Rosenzweig, thesis, Institute fu ¨r Festko ¨rperphysik, Technische Universita ¨t, Berlin, 1982.

[c1] R. Baumert, I. Broser, J. Gutowski and A. Hoffmann, Phys. Rev. B 27, 6263 (1983).

[c2] J. Gutowski, preceding paper, Phys. Rev. B 31, 3611 (1985).

[c3] P. Y. Yu, Phys. Rev. B 20, 5286 (1979).

[c4] E. Cohen, R. A. Street and A. Muranevich, Phys. Rev. B 28, 7115 (1983).

[c5] R. G. Ulbrich, N. V. Hien and C. Weisbuch, Phys. Rev. Lett. 46, 53 (1981).

[c6] P. Y. Yu, M. H. Pilkuhn and F. Evangelisti, Solid State Commun. 25, 371 (1978).

[c7] D. Munz and M. H. Pilkuhn, Solid State Commun. 36, 205 (1980).

[c8] T. Ho ¨nig and J. Gutowski, presentation at the 5th General Conference of the Condensed Matter Division of the EPS, Berlin, Germany, 1985 (unpublished).

[c9] J. J. Song and W. C. Wang, J. Appl. Phys. 55, 660 (1984).

[c10] C. H. Henry and K. Nassau, Phys. Rev. B 2, 997 (1970).

[c11] C. H. Henry, K. Nassau, J. W. Shiever, Phys. Rev. B 4, 2453 (1971); Y. Shiraki, T. Shimada and K. F. Komatsubara, J. Phys. Chem. Solids 38, 937 (1977).

[c12] H. Malm and R. R. Haering, Can. J. Phys. 49, 2432 (1971).

[c13] M. V. Klein, in Light Scattering in Solids, Vol. 8 of Topics in Applied Physics, edited by M. Cardona (Springer, Berlin, 1975), p. 147.

[c14] P. Y. Yu, in Excitons, Vol. 14 of Topics in Current Physics, edited by K. Cho (Springer, Berlin, 1979), p. 211.

[c15] E. Burstein, A. Pinczuk, and S. Buchner, Proceedings of the 14th International Conference on the Physics of Semiconductors, Edinburgh 1978, edited by B. L. H. Wilson (Page Brothers Ltd., Norwich, 1979), p. 1231.

[c16] W. Brenig, R. Zeyher and J. L. Birman, Phys. Rev. B 6, 4617 (1972).

[c17] T. C. Damen and J. Shah, Phys. Rev. Lett. 27, 1506 (1971).

[c18] Y. Nishina, N. Kuroda, M. Yashiro, K. Nakaoka, and T. Goto, in Proceedings of the 1975 Oji Seminar on the Physics of Highly Excited States in Solids, edited by M. Ueta and Y. Nishina (Springer, New York, 1976), p. 327.

[c19] B. Stébé and G. Munschy, Phys. Status Solidi B 88, 713 (1978).

[c20] W. Ungier and M. Suffczynski, Phys. Rev. B 27, 3656 (1983).

[c21] W. Ungier, M. Suffczynski and J. Adamowski, Phys. Rev. B 24, 2109 (1981).

[c22] J. J. Hopfield, in Proceedings of the 7th International Conference on the Physics of Semiconductors, Paris, 1964 (Dunod, Paris, 1965), p. 725.

[c23] D. G. Thomas and J. J. Hopfield, Phys. Rev. 128, 2135 (1962); A. Roussel, thesis for diploma, Institut fu ¨r Festko ¨rperphysik, Technische Universita ¨t, Berlin, 1979.

[c24] H. Venghaus, S. Suga and K. Cho, Phys. Rev. B 16, 4419 (1977).

[c25] I. Broser and M. Rosenzweig, Phys. Rev. B 22, 2000 (1980).

[c26] M. Rosenzweig, thesis, Institute fu ¨r Festko ¨rperphysik, Technische Universita ¨t, Berlin, 1982.

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Electronic and vibronic states of the acceptor–bound-exciton complex ( $A^{0}$ ,X) in CdS. III. High-density electronic resonant Raman scattering at the ( $A^{0}$ ,X) complex

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Electronic and vibronic states of the acceptor–bound-exciton complex (A0,X) in CdS. III. High-density electronic resonant Raman scattering at the (A0,X) complex

Abstract

References (26)

Electronic and vibronic states of the acceptor–bound-exciton complex ( $A^{0}$ ,X) in CdS. III. High-density electronic resonant Raman scattering at the ( $A^{0}$ ,X) complex