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Surface states on low-Miller-index copper surfaces

S. D. Kevan, N. G. Stoffel, and N. V. Smith

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Phys. Rev. B 31, 3348 – Published 15 March, 1985

DOI: https://doi.org/10.1103/PhysRevB.31.3348

Abstract

The results of an extensive high-resolution angle-resolved photoemission study of electronic surface states on the low-Miller-index copper surfaces are reported. New states located in the s-d hybridizational gaps Cu(001) and Cu(011) have been observed and characterized. The former is located near the X¯ point of the surface Brillouin zone at a binding energy of 4.61±0.03 eV in fair accord with recent calculations, while the latter is located near the Y¯ point at a binding energy of 4.72±0.05 eV. The current experimental situation concerning the existence of surface states on copper surfaces, their energy dispersion relations, and photon-energy-dependent intensity are reviewed and compared to the latest self-consistent calculations. Tabulations are presented of the binding energies of all occupied surface states observed so far in photoemission and of all unoccupied surface states observed so far in inverse photoemission on low-Miller-index faces of Cu.

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Phys. Rev. B 31, 3348– Published 15 March, 1985
  • Received 12 October 1984

© 1985 American Physical Society

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