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Experimental and Theoretical Hall Mobilities of Holes and Electrons in Naphthalene

D. H. Spielberg*

A. I. Korn

A. C. Damask

  • Queens College of the City University of New York, Flushing, New York 11367

  • New York City Community College of the City University of New York, Brooklyn, New York

  • Queens College of the City University of New York, Flushing, New York 11367
  • Brookhaven National Laboratory, Upton, New York 11973

  • *Present address: Materials Science Laboratory, Universal Oil Products Research Center, Des Plains, Ill. 60016.

Phys. Rev. B 3, 2012 – Published 15 March, 1971

DOI: https://doi.org/10.1103/PhysRevB.3.2012

Abstract

The Hall effect for electrons and holes has been measured in high-purity single crystals of naphthalene. The magnetic field was directed along each of the a, b, and c crystallographic directions, and the electric field was in each of the two directions orthogonal to the magnetic field. The Hall mobilities μH were computed from the measurements, and the drift mobilities μD were measured in the same crystal. The average ratios μHμD for electrons are BaIb, +1.1; BaIc, +0.9; BbIa, +2.8; BbIc, +2.2; BcIa,3.0; and BcIb,2.9. The ratios for holes are BaIb, 3.9; BaIc, 2.7; BbIa, +0.57; BbIc, +0.37; BcIa,3.6; and BcIb,3.7, where the B's and I's are the magnetic field and the current directions, respectively. The theoretical ratios of Hall to drift mobilities have been calculated by band theory using the transfer integrals evaluated from three different types of wave functions by other investigators. It was found that the wave functions used by Katz, Rice, Choi, and Jortner yielded values which agreed best.

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