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Annealing Study of Dilute Aluminum Alloys Electron Irradiated at Liquid-Nitrogen Temperature

M. Doyama*

J. S. Koehler

Y. N. Lwin†, E. A. Ryan, and D. G. Shaw‡

  • Argonne National Laboratory, Argonne, Illinois 60439

  • Materials Research Laboratory and the Department of Physics, University of Illinois, Urbana, Illinois

  • Argonne National Laboratory, Argonne, Illinois 60439

  • *Present address: Department of Metallurgy, University of Tokyo, Bunkyo-ku, Tokyo, 113, Japan.
  • †Present address: Department of Physics, Western Illinois University, Macomb, Ill.
  • ‡Present address: Department of Materials Science, Northwestern University, Evanston, Ill.
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Phys. Rev. B 3, 1069 – Published 15 February, 1971

DOI: https://doi.org/10.1103/PhysRevB.3.1069

Abstract

Pure and dilute aluminum alloys (Mg, Zn, Ag, Ge, Au, and In) were irradiated at about 90 °K by 2- or 3-MeV electrons. Isothermal annealing for 30 min at temperature intervals 10 °C apart was carried out. The major results were the following: Stage-III annealing occurs by a second-order process with an activation energy EIII=0.60±0.04 eV for both pure and dilute aluminum alloys. Since this activation energy is the same as that found by quenching experiments, it is concluded that stage III in aluminum and dilute aluminum alloys occurs by the motion of vacancies. Two stages below stage III are dependent on the kind of impurity. A mechanism consisting of a breakup of interstituals from impurity traps (single-impurity atoms or impurity-atom clusters) can explain the experimental results. Reverse recovery of electrical resistivity was observed below and above stage III; this is due to Guinier-Preston-zone formation.

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Phys. Rev. B 3, 1069– Published 15 February, 1971
  • Received 17 October 1969

© 1971 American Physical Society

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