Critical-point study of higher conduction bands in Si single crystal by angle-resolved photoemission

A. Kasuya; Y. Nishina; T. Kobayasi

doi:10.1103/PhysRevB.28.4635

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Critical-point study of higher conduction bands in Si single crystal by angle-resolved photoemission

A. Kasuya and Y. Nishina

T. Kobayasi

The Research Institute for Iron, Steel and Other Metals, Tohoku University, Sendai 980, Japan

College of Medical Sciences, Tohoku University, Sendai 980, Japan

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Phys. Rev. B 28, 4635 – Published 15 October, 1983

DOI: https://doi.org/10.1103/PhysRevB.28.4635

Abstract

A critical-point behavior in angle-resolved photoemission has been studied in single-crystal silicon for the incident-photon-energy range from 7.1 to 8.6 eV. A sharp and highly dispersive peak is observed in the relatively broad spectrum. In the direct-optical-transition model, this peak is attributed to photoexcitation of electrons from the highest valence band to a local minimum of the fifth conduction band located in the middle of the $Γ - K$ line. The energy value $E$ of this local minimum relative to the top of the valence band and the magnitude of its wave vector $| \vec{k} |$ are determined to be $E = 6.6 \pm 0.1$ eV and $| \vec{k} | = (5.6 \pm 0.1) \times 10^{7}$ ${cm}^{- 1}$ , respectively. The experimental results are quantitatively consistent with the band-structure calculation by Nara and Kobayasi.

References (19)

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Omitted endnote
C. C. Chang, Surf. Sci. 23, 283 (1970)
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[c1] Photoemission in Solids I,II, edited by M. Cardona and L. Ley (Springer, Berlin, 1978)

[c2] L. Ilver and P. O. Nilsson, Solid State Commun. 18, 677 (1976)

[c3] G. V. Hansson and S. A. Flodström, Phys. Rev. B 17, 473 (1978)

[c4] K. Furusawa, S. Suzuki, T. Sagawa, and T. Kobayasi, Jpn. J. Appl. Phys. 17, Suppl. 17-2, 225 (1978)

[c5] E. O. Kane, Phys. Rev. 175, 1039 (1968)

[c6] E. Dietz and D. E. Eastman, Phys. Rev. Lett. 41, 1974 (1978)

[c7] R. Courths, Solid State Commun. 40, 529 (1981)

[c8] N. E. Christensen, Solid State Commun. 38, 309 (1981)

[c9] R. Courths, V. Badelier, and S. Hüfner, Solid State Commun. 38, 887 (1981)

[c10] G. V. Hansson, R. I. G. Uhrberg, and S. A. Flodström, J. Vac. Sci. Technol. 16(5), 1287 (1979)

[c11] D. E. Eastman, I. J. Himpsel, J. A. Knapp, and K. C. Pandey, in Physics of Semiconductors, 1978, edited by B. L. H. Wilson (IOP, Bristol, 1978), p. 1059

[c12] H. Nara and T. Kobayasi, J. Phys. Soc. Jpn. 41, 1429 (1976)

[c13] Omitted endnote

[c14] C. C. Chang, Surf. Sci. 23, 283 (1970)

[c15] J. E. Rowe, Phys. Lett. 46A, 400 (1974)

[c16] P. J. Feibelman and D. E. Eastman, Phys. Rev. B 10, 2373 (1974)

[c17] F. G. Allen and G. W. Gobeli, J. Appl. Phys. 35, 597 (1964)

[c18] E. O. Kane, Phys. Rev. 159, 624 (1967)

[c19] M. L. Cohen, J. Phys. Soc. Jpn. 49, Suppl. A, 13 (1980)

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Critical-point study of higher conduction bands in Si single crystal by angle-resolved photoemission

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