Highly disordered amorphous selenium studied by x-ray photoemission spectroscopy

Takashi Takahashi; Takasi Sagawa

doi:10.1103/PhysRevB.26.7039

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Highly disordered amorphous selenium studied by x-ray photoemission spectroscopy

Takashi Takahashi and Takasi Sagawa

Department of Physics, Faculty of Science, Tohoku University, Sendai 980, Japan

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Phys. Rev. B 26, 7039 – Published 15 December, 1982

DOI: https://doi.org/10.1103/PhysRevB.26.7039

Abstract

X-ray photoemission spectroscopy (XPS) has been applied to a highly disordered amorphous Se deposited onto a cooled (150-K) substrate. XPS spectral changes have been observed in the $4 p$ bonding and $4 s$ states upon thermal annealing of the film. The thermally induced growth of the upper $4 p$ bonding band is in good agreement with the previously reported UPS (ultraviolet photoemission spectroscopy) measurements [Takahashi et al., Phys. Rev. B 21, 3399 (1980)]. The $4 s$ band of the highly disordered film shows a round and narrow feature and transforms into a rectangular shape upon the thermal annealing. The observed change of the $4 s$ band is explained by a thermally induced increase of the cluster size in the cluster-junction model proposed in the previous UPS study.

References (10)

P. Nielsen, Phys. Rev. B 6, 3739 (1972)
P. Nielsen, in Proceedings of the Fifth International Conference on Amorphous and Liquid Semiconductors, edited by J. Stuke and W. Brenig (Taylor and Francis, London, 1974), p. 639
N. J. Shevchik, J. Tejeda, M. Cardona, and D. W. Langer, Solid State Commun. 12, 1285 (1973)
N. J. Shevchik, M. Cardona, and J. Tejeda, Phys. Rev. B 8, 2833 (1973)
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D. W. Bullett, J. Phys. C 8, L377 (1975)
J. D. Joannopoulos, M. Schluter, and M. L. Cohen, Phys. Rev. B 11, 2186 (1975)
J. Robertson, Philos. Mag. 34, 13 (1976)
T. Takahashi, K. Ohno, and Y. Harada, Phys. Rev. B 21, 3399 (1980)
D. Weaire, in Physics of Structually Disordered Solids, edited by S. S. Mitra (Plenum, New York, 1976), pp. 199-209

[c1] P. Nielsen, Phys. Rev. B 6, 3739 (1972)

[c2] P. Nielsen, in Proceedings of the Fifth International Conference on Amorphous and Liquid Semiconductors, edited by J. Stuke and W. Brenig (Taylor and Francis, London, 1974), p. 639

[c3] N. J. Shevchik, J. Tejeda, M. Cardona, and D. W. Langer, Solid State Commun. 12, 1285 (1973)

[c4] N. J. Shevchik, M. Cardona, and J. Tejeda, Phys. Rev. B 8, 2833 (1973)

[c5] N. J. Shevchik, Phys. Rev. Lett. 33, 1572 (1974)

[c6] D. W. Bullett, J. Phys. C 8, L377 (1975)

[c7] J. D. Joannopoulos, M. Schluter, and M. L. Cohen, Phys. Rev. B 11, 2186 (1975)

[c8] J. Robertson, Philos. Mag. 34, 13 (1976)

[c9] T. Takahashi, K. Ohno, and Y. Harada, Phys. Rev. B 21, 3399 (1980)

[c10] D. Weaire, in Physics of Structually Disordered Solids, edited by S. S. Mitra (Plenum, New York, 1976), pp. 199-209

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Highly disordered amorphous selenium studied by x-ray photoemission spectroscopy

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