Study of the 2.0-eV photoluminescence band in <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Cd</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></mrow><mrow><msub><mrow><mi mathvariant="normal">Mn</mi></mrow><mrow><mi>x</mi></mrow></msub></mrow><mi mathvariant="normal">Te</mi></math></span> semiconductor alloys

M. M. Moriwaki; W. M. Becker; W. Gebhardt; R. R. Galazka

doi:10.1103/PhysRevB.26.3165

Access by Xinjiang University

Study of the 2.0-eV photoluminescence band in ${Cd}_{1 - x} {Mn}_{x} Te$ semiconductor alloys

M. M. Moriwaki, W. M. Becker, W. Gebhardt^*, and R. R. Galazka^†

Department of Physics, Purdue University, West Lafayette, Indiana 47907

^*Permanent address: Physics Department, University of Regensburg, Regensburg, West Germany.
^†Permanent address: Institute of Physics, Polish Academy of Sciences, Warsaw, Poland.

PDF

Phys. Rev. B 26, 3165 – Published 15 September, 1982

DOI: https://doi.org/10.1103/PhysRevB.26.3165

Abstract

The 2.0-eV photoluminescence band in ${Cd}_{1 - x} {Mn}_{x} Te$ semiconductor alloys is investigated over the range $0.4 \leq x \leq 0.7$ . The emission is ascribed to the ${}^{4}T_{1} ({}^{4}G) \to {}^{6}A_{1} ({}^{6}S)$ internal transition of ${Mn}^{2 +}$ within the $3 d^{5}$ state. Excitation spectra reveal a drop in intensity near the fundamental edge; the decrease is a result of competitive intrinsic absorption that does not lead to ${Mn}^{2 +}$ emission. Onset of the ${}^{6}A_{1} \to {}^{4}T_{1}$ transition can be seen for $x > 0.4$ ; excitation in samples with $x > 0.6$ reveals the ${}^{6}A_{1} \to {}^{4}T_{2}$ transition as well. The strongly localized character of the emission is established from full width at half maximum data. A phonon energy of $ℏ ω = 53 \pm 16$ ${cm}^{- 1}$ and a Huang-Rhys factor of $S = 26 \pm 2$ is obtained with the use of a linear configurational coordinate model. In addition, a value of inhomogeneous broadening $H_{in} = 80$ meV (645 ${cm}^{- 1}$ ) is found from the analysis. Various sources of inhomogeneous broadening and line shift are discussed.

References (31)

R. R. Galazka, Physics of Semiconductors—1978, edited by B. L. H. Wilson (The Institute of Physics, Bristol, 1979), p. 133
G. Bastard, C. Rigaux, Y. Guldner, J. Mycielski, and A. Mycielski, J. Phy. (Paris) 39, 87 (1978)
J. A. Gaj, J. Ginter, and R. R. Galazka, Phys. Status Solidi B 89, 655 (1978)
J. A. Gaj, R. R. Galazka, and M. Nawrocki, Solid State Commun. 25, 193 (1978)
M. Jaczynski, J. Kossut, and R. R. Galazka, Phys. Status Solidi B 88, 73 (1978)
N. T. Khoi and J. A. Gaj, Phys. Status Solidi B 83, K133 (1977)
J. Stankiewicz, N. Bottka, and W. Giriat, Proceedings of the 15th International Conference on the Physics of Semiconductors, Kyoto, 1980 [J. Phys. Soc. Jpn. Suppl. A 49, 827 (1980)]
W. M. Becker, M. M. Moriwaki, and W. Gebhardt, Bull. Am. Phys. Soc. 26, 392 (1981)
D. Langer and S. Ibuki, Phys. Rev. 138, A809 (1965)
D. Langer and H. Richter, Phys. Rev. 146, 554 (1966) D. McClure, J. Chem. Phys. 39, 2850 (1963)
H. Gumlich, J. Lumin. 23, 73 (1981)
M. M. Moriwaki, W. M. Becker, W. Gebhardt, and R. R. Galazka, Solid State Commun. 39, 367 (1981)
R. R. Galazka, S. Nagata, and P. H. Keesom, Phys. Rev. B 22, 3344 (1980)
W. Gebhardt, V. Gerhardt, E. Müller, F. Wünsch, and W. M. Becker, J. Lumin. 24/25, 731 (1981)
E. Müller, W. Gebhardt, and V. Gerhardt (unpublished)
R. Y. Tao, M. M. Moriwaki, W. M. Becker, and R. R. Galazka, J. Appl. Phys. 53, 3772 (1982)
Y. Tanabe and S. Sugano, J. Phys. Soc. Jpn. 9, 753 (1954)
Omitted endnote
Omitted endnote
B. F. Griffing and S. A. Shivashankar, Rev. Sci. Instrum. 48, 1225 (1977)
B. S. Sundersheshu, Phys. Status Solidi A 61, K155 (1980)
R. A. Abreu, W. Giriat, and M. P. Vecchi, Phys. Lett. 85A, 399 (1981)
T. H. Keil. Phys. Rev. 140, A601 (1965)
S. Venugopalan, A. Petrou, R. R. Galazka, A. K. Ramdas, and S. Rodriguez, Phys. Rev. B 25, 2681 (1982)
U. Lanver and G. Lehmann, J. Lumin. 17, 225 (1978)
M. Zigone, R. Beserman, and B. Lambert, J. Lumin. 9, 45 (1974)
W. A. Sibley and N. Koumvakalis, Phys. Rev. B 14, 35 (1976)
A. Hamdy, Thesis, Rensselaer Polytechnic Institute, 1971 (unpublished)
E. Neumann, Thesis, Technische Universität Berlin (1971) (D83)
G. Webb, M. Kaminska, M. Lichtensteiger, and J. Lagowski, Solid State Commun. 40, 609 (1981)
D. L. Dexter, J. Chem. Phys. 21, 836 (1953) R. J. Birgeneau, ibid. 50, 4282 (1969) M. Inokuti and F. Hirayama, ibid. 43, 1978 (1965) R. Orbach, Phys. Lett. 48A, 417 (1974)

[c1] R. R. Galazka, Physics of Semiconductors—1978, edited by B. L. H. Wilson (The Institute of Physics, Bristol, 1979), p. 133

[c2] G. Bastard, C. Rigaux, Y. Guldner, J. Mycielski, and A. Mycielski, J. Phy. (Paris) 39, 87 (1978)

[c3] J. A. Gaj, J. Ginter, and R. R. Galazka, Phys. Status Solidi B 89, 655 (1978)

[c4] J. A. Gaj, R. R. Galazka, and M. Nawrocki, Solid State Commun. 25, 193 (1978)

[c5] M. Jaczynski, J. Kossut, and R. R. Galazka, Phys. Status Solidi B 88, 73 (1978)

[c6] N. T. Khoi and J. A. Gaj, Phys. Status Solidi B 83, K133 (1977)

[c7] J. Stankiewicz, N. Bottka, and W. Giriat, Proceedings of the 15th International Conference on the Physics of Semiconductors, Kyoto, 1980 [J. Phys. Soc. Jpn. Suppl. A 49, 827 (1980)]

[c8] W. M. Becker, M. M. Moriwaki, and W. Gebhardt, Bull. Am. Phys. Soc. 26, 392 (1981)

[c9] D. Langer and S. Ibuki, Phys. Rev. 138, A809 (1965)

[c10] D. Langer and H. Richter, Phys. Rev. 146, 554 (1966) D. McClure, J. Chem. Phys. 39, 2850 (1963)

[c11] H. Gumlich, J. Lumin. 23, 73 (1981)

[c12] M. M. Moriwaki, W. M. Becker, W. Gebhardt, and R. R. Galazka, Solid State Commun. 39, 367 (1981)

[c13] R. R. Galazka, S. Nagata, and P. H. Keesom, Phys. Rev. B 22, 3344 (1980)

[c14] W. Gebhardt, V. Gerhardt, E. Müller, F. Wünsch, and W. M. Becker, J. Lumin. 24/25, 731 (1981)

[c15] E. Müller, W. Gebhardt, and V. Gerhardt (unpublished)

[c16] R. Y. Tao, M. M. Moriwaki, W. M. Becker, and R. R. Galazka, J. Appl. Phys. 53, 3772 (1982)

[c17] Y. Tanabe and S. Sugano, J. Phys. Soc. Jpn. 9, 753 (1954)

[c18] Omitted endnote

[c19] Omitted endnote

[c20] B. F. Griffing and S. A. Shivashankar, Rev. Sci. Instrum. 48, 1225 (1977)

[c21] B. S. Sundersheshu, Phys. Status Solidi A 61, K155 (1980)

[c22] R. A. Abreu, W. Giriat, and M. P. Vecchi, Phys. Lett. 85A, 399 (1981)

[c23] T. H. Keil. Phys. Rev. 140, A601 (1965)

[c24] S. Venugopalan, A. Petrou, R. R. Galazka, A. K. Ramdas, and S. Rodriguez, Phys. Rev. B 25, 2681 (1982)

[c25] U. Lanver and G. Lehmann, J. Lumin. 17, 225 (1978)

[c26] M. Zigone, R. Beserman, and B. Lambert, J. Lumin. 9, 45 (1974)

[c27] W. A. Sibley and N. Koumvakalis, Phys. Rev. B 14, 35 (1976)

[c28] A. Hamdy, Thesis, Rensselaer Polytechnic Institute, 1971 (unpublished)

[c29] E. Neumann, Thesis, Technische Universität Berlin (1971) (D83)

[c30] G. Webb, M. Kaminska, M. Lichtensteiger, and J. Lagowski, Solid State Commun. 40, 609 (1981)

[c31] D. L. Dexter, J. Chem. Phys. 21, 836 (1953) R. J. Birgeneau, ibid. 50, 4282 (1969) M. Inokuti and F. Hirayama, ibid. 43, 1978 (1965) R. Orbach, Phys. Lett. 48A, 417 (1974)

Physical Review B

Export citation

Export citation

Study of the 2.0-eV photoluminescence band in ${Cd}_{1 - x} {Mn}_{x} Te$ semiconductor alloys

Abstract

References (31)

Outline

Information

Filter

Filter

Article Lookup

Enter a citation

Study of the 2.0-eV photoluminescence band in Cd1−xMnxTe semiconductor alloys

Abstract

References (31)

Study of the 2.0-eV photoluminescence band in ${Cd}_{1 - x} {Mn}_{x} Te$ semiconductor alloys