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Optical detection of cross relaxation in SiC
Phys. Rev. B 26, 26 – Published 1 July, 1982
DOI: https://doi.org/10.1103/PhysRevB.26.26
Abstract
We report optical detection of cross relaxation (ODCR) for defects in SiC. Many new defects in as-grown and irradiated SiC have been detected by monitoring the effect of their Zeeman energy-conserving spin flips on the triplet bound-exciton luminescence at Ti and at radiation-produced defects. Defects identified by this technique include the nitrogen donor and aluminum acceptor. ODCR may provide a useful new spectroscopic tool for defect study in semiconductors.
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