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Experimental test of the quantum-mechanical image-force theory
Phys. Rev. B 25, 7174 – Published 15 June, 1982
DOI: https://doi.org/10.1103/PhysRevB.25.7174
Abstract
Both photon-assisted-tunneling and internal photoemission measurements have been made on the same metal-oxide-semiconductor samples. The effective barrier heights between the metal (Al or Au) and the oxide (Si) extracted from the internal photoemission measurements are found to be larger by ∼0.3 eV than the effective barrier heights extracted from the photon-assisted-tunneling measurements. Only the quantum-mechanical image-force theory is capable of explaining this result.
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