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Electronic structure of arsenic chalcogenides

David W. Bullett*

  • Department of Physics, University of California, Berkeley, California 94720
  • Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720

  • *Supported in part by the Royal Commission for the Exhibition of 1851.

Phys. Rev. B 14, 1683 – Published 15 August, 1976

DOI: https://doi.org/10.1103/PhysRevB.14.1683

Abstract

A nonempirical localized-orbital approach is used to calculate the electronic structure of As2S3, As4S4, As2Se3, As4Se4, and As2Te3 crystals. Contributions of s, pσ, and p lone-pair orbitals to the various molecular levels are illustrated. Densities of occupied states agree closely with experimental photoemission data. The fundamental absorption edges in As2S3 and As2Se3 are found to correspond to indirect gaps, but with several other indirect and direct transitions within a few tenths of an eV of the indirect edge, consistent with most of the optical-absorption studies. The method is readily applicable to the electronic structure of fully coordinated random networks but because of the severe self-consistency problems we are unable to tackle problems associated with thermal relaxation at wrongly coordinated atoms.

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