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Optical phonon anisotropies in the layer crystals SnS2 and SnSe2

G. Lucovsky and J. C. Mikkelsen, Jr.

W. Y. Liang

R. M. White and R. M. Martin

  • Xerox Palo Alto Research Center, Palo Alto, California 94304

  • Cavendish Laboratory, Cambridge, United Kingdom

  • Xerox Palo Alto Research Center, Palo Alto, California 94304

Phys. Rev. B 14, 1663 – Published 15 August, 1976

DOI: https://doi.org/10.1103/PhysRevB.14.1663

Abstract

We have measured the far-ir reflectance spectra for the layer crystals SnS2 and SnSe2 for the two principal polarizations, Ec and Ec. We find a large difference in the frequencies of the two ir-active phonons, νTO(A2u)>νTO(Eu). Analysis of the lattice dynamics indicates that this anisotropy is due to Coulomb forces associated with charge localized on the atomic sites and as such it provides an empirical measure of the bond ionicity. On the other hand, anisotropies in the Raman modes are explained by noncentral intralayer forces, with smaller contributions from interlayer and Coulomb terms.

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