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Optically switchable currents in perpendicular magnetic anisotropy $M$ -type hexaferrite

Hodam Karnajit Singh¹, Ningthoujam Somorjit Singh ², Prajna Paramita Mohapatra ³, P. K. Giri^1,2, Sher Singh Meena⁴, and Pamu Dobbidi ^1,2,*

¹Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039, India
²Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam 781039, India
³College of Materials Science and Engineering, Hunan University, Changsha 410082, China
⁴Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India

^*Contact author: pamu@iitg.ac.in

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Phys. Rev. B 110, 235124 – Published 9 December, 2024

DOI: https://doi.org/10.1103/PhysRevB.110.235124

Abstract

In response to the growing demand for efficient and cost-effective optically active materials for magneto-optoelectronic devices, we investigated the electronic structure and optical properties of La-substituted ${Ba}_{0.5} {La}_{0.5} {Fe}_{12} O_{19}$ (BLM) $M$ -type hexaferrite, a $3 d$ magnetic transition metal oxide with a high absorption coefficient and strong perpendicular magnetic anisotropy (PMA). Theoretical calculations using generalized gradient approximation (GGA) $+ U$ revealed localized charge confinement at $3 d_{z^{2}}$ of the $Fe (2 a)$ octahedral sites which also leads to the conversion of ${Fe}^{3 +}$ to ${Fe}^{2 +}$ . The optical calculations revealed optical anisotropy where light polarization along $α_{x x} (ω) (\vec{E} ∥ a)$ is observed to be greater than that for light polarization $α_{z z} (ω) (\vec{E} ∥ c)$ and a high optical absorption coefficient. The presence of optical absorption in the low-energy range (0.0–2.0 eV) in BLM is likely due to a $3 d − 3 d$ optical transition, attributed to ${Fe}^{2 +}$ at $Fe (2 a)$ octahedral site. Furthermore, BLM thin films are fabricated on n-type Si and quartz substrates to study magnetic and photoresponse characteristics. It is revealed that PMA with a coercivity ( $H_{c}$ ) of $2403.86 \pm 0.25$ Oe and a magnetic anisotropy constant ( $K_{eff}$ ) of $2.2 \times 10^{6} {erg / cm}^{3}$ . The $M_{r} / M_{s}$ ratio changes significantly with the applied field direction, suggesting weak exchange interaction due to ${Fe}^{2 +}$ ion. BLM also exhibits optically active absorption in the deep UV region, which is consistent with the obtained high absorption coefficient, highlighting its optical responsiveness. To evaluate the photoresponse characteristics, we have fabricated prototype photodetectors using a BLM film, which achieved a responsivity ( $R$ ) of 5 A/W and a detectivity ( $D$ *) of $5.72 \times 10^{11}$ Jones. These photodetectors exhibited rapid response times, with a rise time of $60 µ s$ and a fall time of $7 µ s$ under 405-nm laser illumination. These findings highlight the potential of BLM thin films in magneto-optoelectronic devices, paving the way for innovative applications.

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References (68)

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Optically switchable currents in perpendicular magnetic anisotropy $M$ -type hexaferrite

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Optically switchable currents in perpendicular magnetic anisotropy M-type hexaferrite

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Optically switchable currents in perpendicular magnetic anisotropy $M$ -type hexaferrite