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Surface-generation statistics and associated thermal currents in metal-oxide-semiconductor structures
Phys. Rev. B 11, 775 – Published 15 January, 1975
DOI: https://doi.org/10.1103/PhysRevB.11.775
Abstract
The non-steady-state statistics are derived for traps at the silicon-oxide interface of metal-oxide-semiconductor (MOS) structures. These results are applied to derive the surface-generation current vs. temperature characteristic associated with the generation of electron-hole pairs through the interfacial traps. It is shown that for a negligible rate of generation of carriers in the depletion layer of the semiconductor, the surface generation characteristic reflects the trap distribution in the lower-half of the band gap. Furthermore, it is shown that the curves associated with the bulk-generation and the surface-generation processes exhibit characteristics which allow the two processes to be distinguished.
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